Compound semiconductor

Gallium oxide (Ga2O3) is a semiconductor material with good chemical and thermal stability. Its bandgap width is 4.7-4.9 eV, critical breakdown field strength is 8 MV/cm (much higher than the theoretical limit of 2.5 MV/cm for SiC and 3.3 MV/cm for GaN), electron mobility is 250 cm2/V • s, and it has strong transparent conductivity. The Barigard value exceeds 3000, which is several times that of GaN and SiC materials.

Gallium nitride (GaN) is a wide bandgap semiconductor material with excellent properties such as high electron mobility, high thermal conductivity and high radiation resistance. GaN is widely used in LED lamp manufacturing, RF applications, power electronics and solar cells. Especially in the field of power electronics, GaN is regarded as an important material for future power systems because it can withstand higher voltages and temperatures. At the same time, the radiation resistance properties

Silicon carbide SiC crystal is a wide bandgap semiconductor material with excellent thermal conductivity and high electric field breakdown strength, which makes it have significant performance advantages in harsh environments such as high power, high frequency and high temperature. SiC crystals are widely used in power electronic equipment, such as power devices in electric vehicles, rail transit, power grids and other fields, and can also be used as materials for high-temperature, high-frequenc

GaAs crystal is a direct bandgap semiconductor material with good electron migration performance and high electron velocity, which is suitable for high-speed electronic devices. Compared to silicon, GaAs is better suited to manufacturing faster electronics. In addition, GaAs crystals have a strong absorption capacity for light, so they are widely used in optoelectronic fields such as solar cells, photodiodes, and laser diodes.

Indium phosphide (InP) is an important III-V semiconductor material with direct bandgap properties and high electron mobility. InP single crystal has a band gap of about 1.35 eV and excellent optical and electronic properties at room temperature. InP is often used to make high-speed electronic devices, including high-frequency, high-speed optical fiber communication systems, microwave devices, and some high-efficiency solar cells. In addition, due to the high refractive index and good thermal st

GaSb is the chemical formula of gallium arsenide, an important semiconductor material. It has a wide range of applications, including infrared detectors, lasers, photoelectric sensors, etc. GaSb's outstanding properties include high electron mobility, wide bandgap, low noise, and high saturation drift speed, making it ideal for infrared technology and optoelectronics.

InAs is the chemical formula of indium arsenide, an important semiconductor material. It has excellent electronic motion performance and optical characteristics, and is widely used in infrared detectors, photoelectric sensors, lasers and other fields. InAs offers high carrier mobility, wide bandgap adjustment range, and fast response speed, providing good performance for infrared optics and electronics.

ZnO is the chemical formula of zinc oxide and is a widely used semiconductor material. It has excellent optoelectronic properties and optical properties and can be used in optoelectronic devices, optical coatings, sensors, etc. The advantages of ZnO include wide bandgap, high transparency, excellent electron transport performance and good chemical stability, making it an important application value in optoelectronics and optics.

CdZnTe is the chemical formula of zinc cadmium telluride, which is an important semiconductor material. It has wide bandgap and high electron mobility and is widely used in X-ray and γ-ray detectors, nuclear medicine imaging, and other fields. The advantages of CdZnTe include high energy resolution, fast response time, and good radiation hardness, making it a key material for radiographic detection and imaging techniques.

Aluminum nitride (AlN), with a wide band gap (6.2eV), ultra-high breakdown voltage, and perfect lattice match with high aluminum content AlGaN epitaxial layer, can be widely used in deep ultraviolet detectors, semiconductor laser, and high power microwave devices.