Alloy target material

Nickel-Iron (NiFe(T))

The NiFe sputtering target is a blend of Nickel (Ni) and Iron (Fe). Its production involves high-purity materials, stringent manufacturing controls, and comprehensive testing procedures. It is highly dense, conductive, and has a uniform microstructure, making it optimal for thin film deposition in sputtering systems. Its application primarily includes magnetic devices and anti-corrosion coatings.

Nickel-Vanadium (NiV(T))

The Nickel-Vanadium (NiV) sputtering target is a combination of Nickel (Ni) and Vanadium (V). It is known for its high sputtering yield and low impurity levels. The NiV target finds applications in the production of energy storage devices and electrochemical capacitors.

Nickel-Chromium (NiCr(T))

The Nickel-Chromium (NiCr) sputtering target consists of Nickel (Ni) and Chromium (Cr). It is a critical resource for producing thin films in microelectronics and other industries due to its heat resistance and electrical properties.

Aluminum-Silicon-Copper (AlSiCu(T))

The Aluminium Silicon Copper (AlSiCu) sputtering target combines the characteristics of aluminium, silicon, and copper. This target is utilized extensively in the semiconductor industry due to its excellent electrical and thermal properties. The AlSiCu target helps in producing high-quality thin films that are integral in several high-tech devices.

Titanium-Zirconium (TiZr(T))

The Titanium Zirconium (TiZr) sputtering target is an alloy of Titanium (Ti) and Zirconium (Zr). Known for its high melting point and superior corrosion resistance, this target finds applications in the manufacturing of hard coatings and biomedical devices.

Tungsten-Titanium (WTi(T))

The Tungsten Titanium (WTi) sputtering target comprises Tungsten (W) and Titanium (Ti). Known for its excellent hardness and high melting point, the WTi target is primarily used in the production of thin films in the electronics industry.