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- Semiconductor crystal
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Single crystal substrate
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Multifunctional single crystal substrate
- Barium titanate (BaTiO3)
- Strontium titanate (SrTiO3)
- Iron doped strontium titanate (Fe:SrTiO3)
- Neodymium doped strontium titanate (Nd:SrTiO3)
- Aluminium oxide (Al2O3)
- Potassium tantalum oxide (KTaO3)
- Lead magnesium niobate–lead titanate (PMN-PT)
- Magnesium oxide (MgO)
- Magnesium aluminate spinel (MgAl2O4)
- Lithium aluminate (LiAlO2)
- Lanthanu m aluminate (LaAlO3)
- Lanthanu m strontium aluminate (LaSrAlO4)
- (La,Sr)(Al,Ta)O3
- Neodymium gallate (NdGaO3)
- Terbium gallium garnet (TGG)
- Gadolinium gallium garnet (GGG)
- Sodium chloride (NaCl)
- Potassium bromide (KBr)
- Potassium chloride (KCl)
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Multifunctional single crystal substrate
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Functional crystal
- Optical window
- Scintillation crystal
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Laser crystal
- Rare earth doped lithium yttrium fluoride (RE:LiYF4)
- Rare earth doped lithium lutetium fluoride (RE:LiLuF4)
- Ytterbium doped yttrium aluminium garnet (Yb:YAG)
- Neodymium doped yttrium aluminium garnet (Nd:YAG)
- Erbium doped yttrium aluminium garnet (Er:YAG)
- Holmium doped yttrium aluminium garnet (Ho:YAG)
- Nd,Yb,Er,Tm,Ho,Cr,Lu Infrared laser crystal
- N* crystal
- Metal single crystal
- Material testing analysis
- Material processing
- Scientific research equipment
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Epitaxial Wafer/Films
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Inorganic epitaxial wafer/film
- Gallium Oxide epitaxial wafer (Ga2O3)
- Platinum/Titanium/Silicon Dioxide/Silicon epitacial wafer (Pt/Ti/SiO2/Si)
- Lithium niobate thin film epitaxial wafer
- Lithium tantalate thin film epitaxial wafer
- InGaAs epitaxial wafer
- Gallium Nitride(GaN) epitaxial wafer
- Yttrium Iron Garnet(YIG) epitaxial wafers
- Fullerenes&Fullerols
- Epitaxial silicon wafer
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Inorganic epitaxial wafer/film
- Conductive Glass
- Fine Ceramics
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2-D material
- 2-D crystal
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Layered transition metal compound
- Iron chloride (FeCl2)
- Niobium sulfide (NbS3)
- Gallium telluride iodide (GaTeI)
- Indium selenide (InSe)
- Copper indium phosphide sulfide (CuInP2S6)
- Tungsten sulfide selenide (WSSe)
- Iron germanium telluride (Fe3GeTe2)
- Nickel iodide (NiI2)
- Iron phosphorus sulfide (FePS3)
- Manganese phosphorus selenide (MnPSe3)
- Manganese phosphorus sulfide (MnPS3)
- Interface thermal conductive materials
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Epitaxial Wafer/Films
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High-purity element
- Non-metallic
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Metal
- Scandium (Sc)
- Titanium (Ti)
- Indium (In)
- Gallium (Ga)
- Bismuth (Bi)
- Tin (Sn)
- Zinc (Zn)
- Cadmium (Cd)
- Antimony (Sb)
- Copper (Cu)
- Nickel (Ni)
- Molybdenum (Mo)
- Aluminium (Al)
- Rhenium (Re)
- Hafnium (Hf)
- Vanadium (V)
- Chromium (Cr)
- Iron (Fe)
- Cobalt (Co)
- Zirconium (Zr)
- Niobium (Nb)
- Tungsten (W)
- Germanium (Ge)
- Iron(Fe)
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Compound raw materials
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Oxide
- Tungsten Trioxide (WO3)
- Hafnium Dioxide (HfO2)
- Ytterbium Oxide (Yb2O3)
- Erbium Oxide (Er2O3)
- Lanthanu m Oxide (La2O3)
- Cerium Dioxide (CeO2)
- Tin Dioxide (SnO2)
- Niobium Oxide (Nb2O3)
- Zirconium Dioxide (ZrO2)
- Zinc Oxide (ZnO)
- Copper Oxide (CuO)
- Magnetite (Fe3O4)
- Titanium Dioxide (TiO2)
- Samarium (III) oxide (Sm2O3)
- Silicon Dioxide (SiO2)
- Aluminum Oxide (Al2O3)
- Gallium Oxide Ga2O3(Powder)
- Sulfide
- Fluoride
- Nitride
- Carbide
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Halide
- Gallium Chloride (GaCl3)
- Indium Chloride (InCl3)
- Aluminum Chloride (AlCl3)
- Bismuth Chloride (BiCl3)
- Cadmium Chloride (CdCl2)
- Chromium Chloride (CrCl2)
- Chromium Chloride Hydrate (CrCl2(H2O)n)
- Copper Chloride (CuCl)
- Copper Chloride II (CuCl2)
- Cesium Chloride (CsCl)
- Europium Chloride (EuCl3)
- Europium Chloride Hydrate (EuCl3.xH2O)
- Magnesium Chloride (MgCl2)
- Sodium Chloride (NaCl)
- Nickel Chloride (NiCl2)
- Indium Chloride (InCl3)
- Indium Nitrate Hydrate (In(NO3).xH2O)
- Rubidium Chloride (RbCl3)
- Antimony Chloride (SbCl3)
- Samarium Chloride (SmCl3)
- Samarium Chloride Hydrate (SmCl3.xH2O)
- Scandium Chloride (ScCl3)
- Tellurium Chloride (TeCl3)
- Tantalum Chloride (TaCl5)
- Tungsten Chloride (WCl6)
- Aluminum Bromide (AlBr3)
- Barium Bromide (BaBr2)
- Cobalt Bromide (CoBr2)
- Cadmium Bromide (CdBr2)
- Gallium Bromide (GaBr3)
- Gallium Bromide Hydrate (GaBr3.xH2O)
- Nickel Bromide (NiBr2)
- Potassium Bromide (KBr)
- Lead Bromide (PbBr2)
- Zirconium Bromide (ZrBr2)
- Bismuth Bromide (BiBr4)
- Bismuth Iodide (BiI3)
- Calcium Iodide (CaI2)
- Gadolinium Iodide (GdI2)
- Cobalt Iodide (CoI2)
- Cesium Iodide (CsI)
- Europium Iodide (EuI2)
- Lithium Iodide (LiI)
- Lithium Iodide Hydrate (LiI.xH2O)
- Gallium Iodide (GaI3)
- Gadolinium Iodide (GdI3)
- Indium Iodide (InI3)
- Potassium Iodide (KI)
- Lanthanu m Iodide (LaI3)
- Lutetium Iodide (LuI3)
- Magnesium Iodide (MgI2)
- Sodium Iodide (NaI)
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Oxide
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High-purity element
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Sputtering Target
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Metal target material
- Gold (Au(T))
- Silver (Ag(T))
- Platinum (Pt(T))
- Palladium (Pd(T))
- Ruthenium (Ru(T))
- Iridium (Ir(T))
- Aluminium (Al(T))
- Copper (Cu(T))
- Titanium (Ti(T))
- Nickel (Ni(T))
- Chromium (Cr(T))
- Cobalt (Co(T))
- Iron (Fe(T))
- Manganese (Mn(T))
- Zinc (Zn(T))
- Vanadium (V(T))
- Tungsten (W(T))
- Hafnium (Hf(T))
- Niobium (Nb(T))
- Molybdenum (Mo(T))
- Lanthanu m (La (T))
- Cerium (Ce (T))
- Praseodymium (Pr (T))
- Neodymium (Nd (T))
- Samarium (Sm (T))
- Europium (Eu (T))
- Gadolinium (Gd (T))
- Terbium (Tb (T))
- Dysprosium (Dy (T))
- Holmium (Ho (T))
- Erbium (Er (T))
- Thulium (Tm (T))
- Ytterbium (Yb (T))
- Lutetium (Lu (T))
- Alloy target material
- Semiconductor target material
-
Oxide target material
- Aluminum Oxide (Al2O3(T))
- Silicon Dioxide (SiO2(T))
- Titanium Dioxide (TiO2(T))
- Chromium Oxide (Cr2O3(T))
- Nickel Oxide (NiO(T))
- Copper Oxide (CuO(T))
- Zinc Oxide (ZnO(T))
- Zirconium Oxide (ZrO2(T))
- Indium Tin Oxide (ITO(T))
- Indium Zinc Oxide (IZO(T))
- Aluminum Doped Zinc Oxide (AZO(T))
- Cerium Oxide (CeO2(T))
- Tungsten Trioxide (WO3(T))
- Hafnium Oxide (HfO2(T))
- Indium Gallium Zinc Oxide (IGZO(T))
- Nitride target material
- Sulfide target material
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Antimony tellurium selenium boron target material
- Magnesium Boride (MgB2(T))
- Lanthanu m Hexaboride (LaB6(T))
- Titanium Diboride (TiB2(T))
- Zinc Selenide (ZnSe(T))
- Zinc Antimonide (Zn4Sb3(T))
- Cadmium Selenide (CdSe(T))
- Indium Telluride (In2Te3(T))
- Tin Selenide (SnSe(T))
- Germanium Antimonide (GeSb(T))
- Antimony Selenide (Sb2Se3(T))
- Antimony Telluride (Sb2Te3(T))
- Bismuth Telluride (Bi2Te3(T))
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Metal target material
-
Sputtering Target
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- Products
- Sputtering Target
- Semiconductor target material
- Semiconductor crystal
-
Functional crystal
- Optical window
- Scintillation crystal
-
Laser crystal
- Rare earth doped lithium yttrium fluoride (RE:LiYF4)
- Rare earth doped lithium lutetium fluoride (RE:LiLuF4)
- Ytterbium doped yttrium aluminium garnet (Yb:YAG)
- Neodymium doped yttrium aluminium garnet (Nd:YAG)
- Erbium doped yttrium aluminium garnet (Er:YAG)
- Holmium doped yttrium aluminium garnet (Ho:YAG)
- Nd,Yb,Er,Tm,Ho,Cr,Lu Infrared laser crystal
- N* crystal
- Metal single crystal
-
2-D material
- 2-D crystal
-
Layered transition metal compound
- Iron chloride (FeCl2)
- Niobium sulfide (NbS3)
- Gallium telluride iodide (GaTeI)
- Indium selenide (InSe)
- Copper indium phosphide sulfide (CuInP2S6)
- Tungsten sulfide selenide (WSSe)
- Iron germanium telluride (Fe3GeTe2)
- Nickel iodide (NiI2)
- Iron phosphorus sulfide (FePS3)
- Manganese phosphorus selenide (MnPSe3)
- Manganese phosphorus sulfide (MnPS3)
-
High-purity element
- Non-metallic
-
Metal
- Scandium (Sc)
- Titanium (Ti)
- Indium (In)
- Gallium (Ga)
- Bismuth (Bi)
- Tin (Sn)
- Zinc (Zn)
- Cadmium (Cd)
- Antimony (Sb)
- Copper (Cu)
- Nickel (Ni)
- Molybdenum (Mo)
- Aluminium (Al)
- Rhenium (Re)
- Hafnium (Hf)
- Vanadium (V)
- Chromium (Cr)
- Iron (Fe)
- Cobalt (Co)
- Zirconium (Zr)
- Niobium (Nb)
- Tungsten (W)
- Germanium (Ge)
- Iron(Fe)
-
Single crystal substrate
-
Multifunctional single crystal substrate
- Barium titanate (BaTiO3)
- Strontium titanate (SrTiO3)
- Iron doped strontium titanate (Fe:SrTiO3)
- Neodymium doped strontium titanate (Nd:SrTiO3)
- Aluminium oxide (Al2O3)
- Potassium tantalum oxide (KTaO3)
- Lead magnesium niobate–lead titanate (PMN-PT)
- Magnesium oxide (MgO)
- Magnesium aluminate spinel (MgAl2O4)
- Lithium aluminate (LiAlO2)
- Lanthanu m aluminate (LaAlO3)
- Lanthanu m strontium aluminate (LaSrAlO4)
- (La,Sr)(Al,Ta)O3
- Neodymium gallate (NdGaO3)
- Terbium gallium garnet (TGG)
- Gadolinium gallium garnet (GGG)
- Sodium chloride (NaCl)
- Potassium bromide (KBr)
- Potassium chloride (KCl)
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Multifunctional single crystal substrate
-
Sputtering Target
-
Metal target material
- Gold (Au(T))
- Silver (Ag(T))
- Platinum (Pt(T))
- Palladium (Pd(T))
- Ruthenium (Ru(T))
- Iridium (Ir(T))
- Aluminium (Al(T))
- Copper (Cu(T))
- Titanium (Ti(T))
- Nickel (Ni(T))
- Chromium (Cr(T))
- Cobalt (Co(T))
- Iron (Fe(T))
- Manganese (Mn(T))
- Zinc (Zn(T))
- Vanadium (V(T))
- Tungsten (W(T))
- Hafnium (Hf(T))
- Niobium (Nb(T))
- Molybdenum (Mo(T))
- Lanthanu m (La (T))
- Cerium (Ce (T))
- Praseodymium (Pr (T))
- Neodymium (Nd (T))
- Samarium (Sm (T))
- Europium (Eu (T))
- Gadolinium (Gd (T))
- Terbium (Tb (T))
- Dysprosium (Dy (T))
- Holmium (Ho (T))
- Erbium (Er (T))
- Thulium (Tm (T))
- Ytterbium (Yb (T))
- Lutetium (Lu (T))
- Alloy target material
- Semiconductor target material
-
Oxide target material
- Aluminum Oxide (Al2O3(T))
- Silicon Dioxide (SiO2(T))
- Titanium Dioxide (TiO2(T))
- Chromium Oxide (Cr2O3(T))
- Nickel Oxide (NiO(T))
- Copper Oxide (CuO(T))
- Zinc Oxide (ZnO(T))
- Zirconium Oxide (ZrO2(T))
- Indium Tin Oxide (ITO(T))
- Indium Zinc Oxide (IZO(T))
- Aluminum Doped Zinc Oxide (AZO(T))
- Cerium Oxide (CeO2(T))
- Tungsten Trioxide (WO3(T))
- Hafnium Oxide (HfO2(T))
- Indium Gallium Zinc Oxide (IGZO(T))
- Nitride target material
- Sulfide target material
-
Antimony tellurium selenium boron target material
- Magnesium Boride (MgB2(T))
- Lanthanu m Hexaboride (LaB6(T))
- Titanium Diboride (TiB2(T))
- Zinc Selenide (ZnSe(T))
- Zinc Antimonide (Zn4Sb3(T))
- Cadmium Selenide (CdSe(T))
- Indium Telluride (In2Te3(T))
- Tin Selenide (SnSe(T))
- Germanium Antimonide (GeSb(T))
- Antimony Selenide (Sb2Se3(T))
- Antimony Telluride (Sb2Te3(T))
- Bismuth Telluride (Bi2Te3(T))
-
Metal target material
- Interface thermal conductive materials
-
Compound raw materials
-
Oxide
- Tungsten Trioxide (WO3)
- Hafnium Dioxide (HfO2)
- Ytterbium Oxide (Yb2O3)
- Erbium Oxide (Er2O3)
- Lanthanu m Oxide (La2O3)
- Cerium Dioxide (CeO2)
- Tin Dioxide (SnO2)
- Niobium Oxide (Nb2O3)
- Zirconium Dioxide (ZrO2)
- Zinc Oxide (ZnO)
- Copper Oxide (CuO)
- Magnetite (Fe3O4)
- Titanium Dioxide (TiO2)
- Samarium (III) oxide (Sm2O3)
- Silicon Dioxide (SiO2)
- Aluminum Oxide (Al2O3)
- Gallium Oxide Ga2O3(Powder)
- Sulfide
- Fluoride
- Nitride
- Carbide
-
Halide
- Gallium Chloride (GaCl3)
- Indium Chloride (InCl3)
- Aluminum Chloride (AlCl3)
- Bismuth Chloride (BiCl3)
- Cadmium Chloride (CdCl2)
- Chromium Chloride (CrCl2)
- Chromium Chloride Hydrate (CrCl2(H2O)n)
- Copper Chloride (CuCl)
- Copper Chloride II (CuCl2)
- Cesium Chloride (CsCl)
- Europium Chloride (EuCl3)
- Europium Chloride Hydrate (EuCl3.xH2O)
- Magnesium Chloride (MgCl2)
- Sodium Chloride (NaCl)
- Nickel Chloride (NiCl2)
- Indium Chloride (InCl3)
- Indium Nitrate Hydrate (In(NO3).xH2O)
- Rubidium Chloride (RbCl3)
- Antimony Chloride (SbCl3)
- Samarium Chloride (SmCl3)
- Samarium Chloride Hydrate (SmCl3.xH2O)
- Scandium Chloride (ScCl3)
- Tellurium Chloride (TeCl3)
- Tantalum Chloride (TaCl5)
- Tungsten Chloride (WCl6)
- Aluminum Bromide (AlBr3)
- Barium Bromide (BaBr2)
- Cobalt Bromide (CoBr2)
- Cadmium Bromide (CdBr2)
- Gallium Bromide (GaBr3)
- Gallium Bromide Hydrate (GaBr3.xH2O)
- Nickel Bromide (NiBr2)
- Potassium Bromide (KBr)
- Lead Bromide (PbBr2)
- Zirconium Bromide (ZrBr2)
- Bismuth Bromide (BiBr4)
- Bismuth Iodide (BiI3)
- Calcium Iodide (CaI2)
- Gadolinium Iodide (GdI2)
- Cobalt Iodide (CoI2)
- Cesium Iodide (CsI)
- Europium Iodide (EuI2)
- Lithium Iodide (LiI)
- Lithium Iodide Hydrate (LiI.xH2O)
- Gallium Iodide (GaI3)
- Gadolinium Iodide (GdI3)
- Indium Iodide (InI3)
- Potassium Iodide (KI)
- Lanthanu m Iodide (LaI3)
- Lutetium Iodide (LuI3)
- Magnesium Iodide (MgI2)
- Sodium Iodide (NaI)
-
Oxide
-
Epitaxial Wafer/Films
-
Inorganic epitaxial wafer/film
- Gallium Oxide epitaxial wafer (Ga2O3)
- Platinum/Titanium/Silicon Dioxide/Silicon epitacial wafer (Pt/Ti/SiO2/Si)
- Lithium niobate thin film epitaxial wafer
- Lithium tantalate thin film epitaxial wafer
- InGaAs epitaxial wafer
- Gallium Nitride(GaN) epitaxial wafer
- Yttrium Iron Garnet(YIG) epitaxial wafers
- Fullerenes&Fullerols
- Epitaxial silicon wafer
-
Inorganic epitaxial wafer/film
- Material testing analysis
- Scientific research equipment
- Material processing
- Conductive Glass
- Fine Ceramics
Semiconductor target material
Carbon (C(T))
Carbon (C) sputtering targets are renowned for their excellent electrical and thermal conductivity. They are used in various applications, including microelectronics and hard coating industries.
Silicon (Si(T))
Silicon (Si) sputtering targets are known for their high purity and versatility, making them ideal for semiconductor, solar cell, and thin film applications.
Germanium (Ge(T))
Germanium (Ge) sputtering targets are notable for their high purity and excellent thermal properties. They are extensively used in the manufacture of semiconductors and infrared optical devices.
Boron (B(T))
Boron (B) sputtering targets exhibit unique chemical and physical properties, which make them well-suited for applications in semiconductor devices and nuclear technology.
Antimony (Sb(T))
Antimony (Sb) sputtering targets are valued for their unique properties such as their low thermal conductivity and brittleness. They find applications in the electronics industry and photovoltaic materials.
Tellurium (Te(T))
Tellurium (Te) sputtering targets are known for their high conductivity and find use in the fabrication of semiconductors, thermoelectric devices, and photovoltaic cells.