Antimony tellurium selenium boron target material

Magnesium diboride (MgB2) sputtering targets are widely recognized for their superconducting properties at relatively high temperatures, making them valuable for various superconducting applications. They are used in the production of superconducting thin films, wires, and devices for use in energy transmission, medical imaging, and quantum computing.

Lanthanu m hexaboride (LaB6) sputtering targets are highly valued for their exceptional electron emission properties, making them suitable for electron sources in electron microscopes and other electron beam applications. They exhibit a low work function, high melting point, and excellent thermionic emission, ensuring stable and efficient electron emission.

Titanium diboride (TiB2) sputtering targets are widely used for the deposition of wear-resistant and corrosion-resistant coatings. They find applications in cutting tools, molds, and protective coatings due to their exceptional hardness, high melting point, and chemical stability.

Zinc selenide (ZnSe) sputtering targets are valued for their excellent optical properties and wide bandgap. They find applications in optoelectronic devices, infrared optics, and laser components due to their transparency in the infrared region and efficient light emission.

Zinc antimonide (Zn4Sb3) sputtering targets are used for the deposition of thin films with desirable thermoelectric properties. They find applications in thermoelectric devices, such as power generators and coolers, due to their excellent electrical conductivity and high thermoelectric efficiency.

Cadmium selenide (CdSe) sputtering targets are widely used for the deposition of thin films with excellent optical and electrical properties. They find applications in solar cells, photodetectors, and optoelectronic devices due to their suitable bandgap and high photoresponsivity.

Indium telluride (In2Te3) sputtering targets are highly valued for their unique electronic and thermal properties. They find applications in phase-change memory devices, thermoelectric devices, and infrared detectors due to their high electrical conductivity and excellent thermal stability.

Tin selenide (SnSe) sputtering targets are utilized for the deposition of thin films with excellent thermoelectric properties. They find applications in thermoelectric devices, such as power generators and solid-state refrigeration, due to their high thermoelectric efficiency and suitable bandgap.

Germanium antimony (GeSb) sputtering targets are widely used for the deposition of thin films with exceptional phase-change properties. They find applications in phase-change memory devices and data storage due to their reversible and rapid phase transitions between amorphous and crystalline states.

Antimony(III) selenide (Sb2Se3) sputtering targets are valued for their unique electronic and optical properties. They find applications in photovoltaic devices, sensors, and optoelectronic devices due to their suitable bandgap and high photoresponsivity.

Antimony(III) telluride (Sb2Te3) sputtering target is a compound composed of antimony and tellurium elements. It is widely recognized for its unique electronic and thermal properties, making it highly valuable in various electronic and optoelectronic applications. Sb2Te3 is a topological insulator that exhibits excellent electrical conductivity in its surface states while being an insulator in the bulk. This property opens up possibilities for utilizing Sb2Te3 in spintronic devices, thermoelectr

Bismuth telluride (Bi2Te3) sputtering targets are widely recognized for their exceptional thermoelectric properties. They find applications in thermoelectric cooling and power generation devices due to their high thermoelectric efficiency and low thermal conductivity.