Inorganic epitaxial wafer/film

Lithium niobate thin film is a thin film made of lithium niobate (LiNbO Å) material, which has many excellent properties, making it widely used in the fields of electronics, optics, and communication.

Lithium tantalate thin film is a thin film made of lithium tantalate (LiTaO3) material. LiTaO3 is a crystal material with unique electrical properties, commonly used in the manufacturing of piezoelectric and optical devices.

Produce high-performance and high-quality compound semiconductor materials based on gallium arsenide (GaAs), indium phosphide (InP), and indium antimonide (GaSb) substrates.

GaN epitaxial wafers are a key semiconductor material commonly used for manufacturing high-frequency, high-power, and high-temperature electronic devices, such as high electron mobility transistors (HEMTs) and optoelectronic devices. Gallium nitride has many excellent properties, including high electron mobility, high breakdown electric field strength, excellent thermal stability, and low impurity concentration.

YIG (Yttrium Iron Garnet) belongs to the garnet family. Its chemical formula is Y3Fe5O12, where Y represents yttrium atom, Fe represents iron atom, and O represents oxygen atom. YiG has magnetic and optical properties and is widely used in the fields of optical and microwave devices.

The molecular structure of C60 is a spherical 32hedron, consisting of 60 carbon atoms connected by 20 hexagonal and 12 pentagonal rings, forming a spherical hollow symmetric molecule with 30 carbon carbon double bonds. Therefore, fullerene is also known as football.

Silicon epitaxial wafers are commonly used in the field of semiconductor manufacturing, especially in integrated circuit manufacturing. Through epitaxial technology, different silicon layers can be achieved on the same silicon wafer, each with different electrical characteristics. This helps to integrate devices with different functions on the same chip, improving integration and performance.