Dihedral (Shanghai) Science and Technology Co., Ltd
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Products
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- Semiconductor crystal
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Single crystal substrate
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Multifunctional single crystal substrate
- Barium titanate (BaTiO3)
- Strontium titanate (SrTiO3)
- Iron doped strontium titanate (Fe:SrTiO3)
- Neodymium doped strontium titanate (Nd:SrTiO3)
- Aluminium oxide (Al2O3)
- Potassium tantalum oxide (KTaO3)
- Lead magnesium niobate–lead titanate (PMN-PT)
- Magnesium oxide (MgO)
- Magnesium aluminate spinel (MgAl2O4)
- Lithium aluminate (LiAlO2)
- Lanthanu m aluminate (LaAlO3)
- Lanthanu m strontium aluminate (LaSrAlO4)
- (La,Sr)(Al,Ta)O3
- Neodymium gallate (NdGaO3)
- Terbium gallium garnet (TGG)
- Gadolinium gallium garnet (GGG)
- Sodium chloride (NaCl)
- Potassium bromide (KBr)
- Potassium chloride (KCl)
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Multifunctional single crystal substrate
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Functional crystal
- Optical window
- Scintillation crystal
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Laser crystal
- Rare earth doped lithium yttrium fluoride (RE:LiYF4)
- Rare earth doped lithium lutetium fluoride (RE:LiLuF4)
- Ytterbium doped yttrium aluminium garnet (Yb:YAG)
- Neodymium doped yttrium aluminium garnet (Nd:YAG)
- Erbium doped yttrium aluminium garnet (Er:YAG)
- Holmium doped yttrium aluminium garnet (Ho:YAG)
- Nd,Yb,Er,Tm,Ho,Cr,Lu Infrared laser crystal
- N* crystal
- Metal single crystal
- Material testing analysis
- Material processing
- Scientific research equipment
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Epitaxial Wafer/Films
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Inorganic epitaxial wafer/film
- Gallium Oxide epitaxial wafer (Ga2O3)
- Platinum/Titanium/Silicon Dioxide/Silicon epitacial wafer (Pt/Ti/SiO2/Si)
- Lithium niobate thin film epitaxial wafer
- Lithium tantalate thin film epitaxial wafer
- InGaAs epitaxial wafer
- Gallium Nitride(GaN) epitaxial wafer
- Yttrium Iron Garnet(YIG) epitaxial wafers
- Fullerenes&Fullerols
- Epitaxial silicon wafer
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Inorganic epitaxial wafer/film
- Conductive Glass
- Fine Ceramics
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2-D material
- 2-D crystal
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Layered transition metal compound
- Iron chloride (FeCl2)
- Niobium sulfide (NbS3)
- Gallium telluride iodide (GaTeI)
- Indium selenide (InSe)
- Copper indium phosphide sulfide (CuInP2S6)
- Tungsten sulfide selenide (WSSe)
- Iron germanium telluride (Fe3GeTe2)
- Nickel iodide (NiI2)
- Iron phosphorus sulfide (FePS3)
- Manganese phosphorus selenide (MnPSe3)
- Manganese phosphorus sulfide (MnPS3)
- Interface thermal conductive materials
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Epitaxial Wafer/Films
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High-purity element
- Non-metallic
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Metal
- Scandium (Sc)
- Titanium (Ti)
- Indium (In)
- Gallium (Ga)
- Bismuth (Bi)
- Tin (Sn)
- Zinc (Zn)
- Cadmium (Cd)
- Antimony (Sb)
- Copper (Cu)
- Nickel (Ni)
- Molybdenum (Mo)
- Aluminium (Al)
- Rhenium (Re)
- Hafnium (Hf)
- Vanadium (V)
- Chromium (Cr)
- Iron (Fe)
- Cobalt (Co)
- Zirconium (Zr)
- Niobium (Nb)
- Tungsten (W)
- Germanium (Ge)
- Iron(Fe)
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Compound raw materials
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Oxide
- Tungsten Trioxide (WO3)
- Hafnium Dioxide (HfO2)
- Ytterbium Oxide (Yb2O3)
- Erbium Oxide (Er2O3)
- Lanthanu m Oxide (La2O3)
- Cerium Dioxide (CeO2)
- Tin Dioxide (SnO2)
- Niobium Oxide (Nb2O3)
- Zirconium Dioxide (ZrO2)
- Zinc Oxide (ZnO)
- Copper Oxide (CuO)
- Magnetite (Fe3O4)
- Titanium Dioxide (TiO2)
- Samarium (III) oxide (Sm2O3)
- Silicon Dioxide (SiO2)
- Aluminum Oxide (Al2O3)
- Gallium Oxide Ga2O3(Powder)
- Sulfide
- Fluoride
- Nitride
- Carbide
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Halide
- Gallium Chloride (GaCl3)
- Indium Chloride (InCl3)
- Aluminum Chloride (AlCl3)
- Bismuth Chloride (BiCl3)
- Cadmium Chloride (CdCl2)
- Chromium Chloride (CrCl2)
- Chromium Chloride Hydrate (CrCl2(H2O)n)
- Copper Chloride (CuCl)
- Copper Chloride II (CuCl2)
- Cesium Chloride (CsCl)
- Europium Chloride (EuCl3)
- Europium Chloride Hydrate (EuCl3.xH2O)
- Magnesium Chloride (MgCl2)
- Sodium Chloride (NaCl)
- Nickel Chloride (NiCl2)
- Indium Chloride (InCl3)
- Indium Nitrate Hydrate (In(NO3).xH2O)
- Rubidium Chloride (RbCl3)
- Antimony Chloride (SbCl3)
- Samarium Chloride (SmCl3)
- Samarium Chloride Hydrate (SmCl3.xH2O)
- Scandium Chloride (ScCl3)
- Tellurium Chloride (TeCl3)
- Tantalum Chloride (TaCl5)
- Tungsten Chloride (WCl6)
- Aluminum Bromide (AlBr3)
- Barium Bromide (BaBr2)
- Cobalt Bromide (CoBr2)
- Cadmium Bromide (CdBr2)
- Gallium Bromide (GaBr3)
- Gallium Bromide Hydrate (GaBr3.xH2O)
- Nickel Bromide (NiBr2)
- Potassium Bromide (KBr)
- Lead Bromide (PbBr2)
- Zirconium Bromide (ZrBr2)
- Bismuth Bromide (BiBr4)
- Bismuth Iodide (BiI3)
- Calcium Iodide (CaI2)
- Gadolinium Iodide (GdI2)
- Cobalt Iodide (CoI2)
- Cesium Iodide (CsI)
- Europium Iodide (EuI2)
- Lithium Iodide (LiI)
- Lithium Iodide Hydrate (LiI.xH2O)
- Gallium Iodide (GaI3)
- Gadolinium Iodide (GdI3)
- Indium Iodide (InI3)
- Potassium Iodide (KI)
- Lanthanu m Iodide (LaI3)
- Lutetium Iodide (LuI3)
- Magnesium Iodide (MgI2)
- Sodium Iodide (NaI)
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Oxide
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High-purity element
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Sputtering Target
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Metal target material
- Gold (Au(T))
- Silver (Ag(T))
- Platinum (Pt(T))
- Palladium (Pd(T))
- Ruthenium (Ru(T))
- Iridium (Ir(T))
- Aluminium (Al(T))
- Copper (Cu(T))
- Titanium (Ti(T))
- Nickel (Ni(T))
- Chromium (Cr(T))
- Cobalt (Co(T))
- Iron (Fe(T))
- Manganese (Mn(T))
- Zinc (Zn(T))
- Vanadium (V(T))
- Tungsten (W(T))
- Hafnium (Hf(T))
- Niobium (Nb(T))
- Molybdenum (Mo(T))
- Lanthanu m (La (T))
- Cerium (Ce (T))
- Praseodymium (Pr (T))
- Neodymium (Nd (T))
- Samarium (Sm (T))
- Europium (Eu (T))
- Gadolinium (Gd (T))
- Terbium (Tb (T))
- Dysprosium (Dy (T))
- Holmium (Ho (T))
- Erbium (Er (T))
- Thulium (Tm (T))
- Ytterbium (Yb (T))
- Lutetium (Lu (T))
- Alloy target material
- Semiconductor target material
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Oxide target material
- Aluminum Oxide (Al2O3(T))
- Silicon Dioxide (SiO2(T))
- Titanium Dioxide (TiO2(T))
- Chromium Oxide (Cr2O3(T))
- Nickel Oxide (NiO(T))
- Copper Oxide (CuO(T))
- Zinc Oxide (ZnO(T))
- Zirconium Oxide (ZrO2(T))
- Indium Tin Oxide (ITO(T))
- Indium Zinc Oxide (IZO(T))
- Aluminum Doped Zinc Oxide (AZO(T))
- Cerium Oxide (CeO2(T))
- Tungsten Trioxide (WO3(T))
- Hafnium Oxide (HfO2(T))
- Indium Gallium Zinc Oxide (IGZO(T))
- Nitride target material
- Sulfide target material
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Antimony tellurium selenium boron target material
- Magnesium Boride (MgB2(T))
- Lanthanu m Hexaboride (LaB6(T))
- Titanium Diboride (TiB2(T))
- Zinc Selenide (ZnSe(T))
- Zinc Antimonide (Zn4Sb3(T))
- Cadmium Selenide (CdSe(T))
- Indium Telluride (In2Te3(T))
- Tin Selenide (SnSe(T))
- Germanium Antimonide (GeSb(T))
- Antimony Selenide (Sb2Se3(T))
- Antimony Telluride (Sb2Te3(T))
- Bismuth Telluride (Bi2Te3(T))
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Metal target material
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Sputtering Target
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- About
- Home
- Products
- Material testing analysis
- Material testing analysis
- Semiconductor crystal
-
Functional crystal
- Optical window
- Scintillation crystal
-
Laser crystal
- Rare earth doped lithium yttrium fluoride (RE:LiYF4)
- Rare earth doped lithium lutetium fluoride (RE:LiLuF4)
- Ytterbium doped yttrium aluminium garnet (Yb:YAG)
- Neodymium doped yttrium aluminium garnet (Nd:YAG)
- Erbium doped yttrium aluminium garnet (Er:YAG)
- Holmium doped yttrium aluminium garnet (Ho:YAG)
- Nd,Yb,Er,Tm,Ho,Cr,Lu Infrared laser crystal
- N* crystal
- Metal single crystal
-
2-D material
- 2-D crystal
-
Layered transition metal compound
- Iron chloride (FeCl2)
- Niobium sulfide (NbS3)
- Gallium telluride iodide (GaTeI)
- Indium selenide (InSe)
- Copper indium phosphide sulfide (CuInP2S6)
- Tungsten sulfide selenide (WSSe)
- Iron germanium telluride (Fe3GeTe2)
- Nickel iodide (NiI2)
- Iron phosphorus sulfide (FePS3)
- Manganese phosphorus selenide (MnPSe3)
- Manganese phosphorus sulfide (MnPS3)
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High-purity element
- Non-metallic
-
Metal
- Scandium (Sc)
- Titanium (Ti)
- Indium (In)
- Gallium (Ga)
- Bismuth (Bi)
- Tin (Sn)
- Zinc (Zn)
- Cadmium (Cd)
- Antimony (Sb)
- Copper (Cu)
- Nickel (Ni)
- Molybdenum (Mo)
- Aluminium (Al)
- Rhenium (Re)
- Hafnium (Hf)
- Vanadium (V)
- Chromium (Cr)
- Iron (Fe)
- Cobalt (Co)
- Zirconium (Zr)
- Niobium (Nb)
- Tungsten (W)
- Germanium (Ge)
- Iron(Fe)
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Single crystal substrate
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Multifunctional single crystal substrate
- Barium titanate (BaTiO3)
- Strontium titanate (SrTiO3)
- Iron doped strontium titanate (Fe:SrTiO3)
- Neodymium doped strontium titanate (Nd:SrTiO3)
- Aluminium oxide (Al2O3)
- Potassium tantalum oxide (KTaO3)
- Lead magnesium niobate–lead titanate (PMN-PT)
- Magnesium oxide (MgO)
- Magnesium aluminate spinel (MgAl2O4)
- Lithium aluminate (LiAlO2)
- Lanthanu m aluminate (LaAlO3)
- Lanthanu m strontium aluminate (LaSrAlO4)
- (La,Sr)(Al,Ta)O3
- Neodymium gallate (NdGaO3)
- Terbium gallium garnet (TGG)
- Gadolinium gallium garnet (GGG)
- Sodium chloride (NaCl)
- Potassium bromide (KBr)
- Potassium chloride (KCl)
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Multifunctional single crystal substrate
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Sputtering Target
-
Metal target material
- Gold (Au(T))
- Silver (Ag(T))
- Platinum (Pt(T))
- Palladium (Pd(T))
- Ruthenium (Ru(T))
- Iridium (Ir(T))
- Aluminium (Al(T))
- Copper (Cu(T))
- Titanium (Ti(T))
- Nickel (Ni(T))
- Chromium (Cr(T))
- Cobalt (Co(T))
- Iron (Fe(T))
- Manganese (Mn(T))
- Zinc (Zn(T))
- Vanadium (V(T))
- Tungsten (W(T))
- Hafnium (Hf(T))
- Niobium (Nb(T))
- Molybdenum (Mo(T))
- Lanthanu m (La (T))
- Cerium (Ce (T))
- Praseodymium (Pr (T))
- Neodymium (Nd (T))
- Samarium (Sm (T))
- Europium (Eu (T))
- Gadolinium (Gd (T))
- Terbium (Tb (T))
- Dysprosium (Dy (T))
- Holmium (Ho (T))
- Erbium (Er (T))
- Thulium (Tm (T))
- Ytterbium (Yb (T))
- Lutetium (Lu (T))
- Alloy target material
- Semiconductor target material
-
Oxide target material
- Aluminum Oxide (Al2O3(T))
- Silicon Dioxide (SiO2(T))
- Titanium Dioxide (TiO2(T))
- Chromium Oxide (Cr2O3(T))
- Nickel Oxide (NiO(T))
- Copper Oxide (CuO(T))
- Zinc Oxide (ZnO(T))
- Zirconium Oxide (ZrO2(T))
- Indium Tin Oxide (ITO(T))
- Indium Zinc Oxide (IZO(T))
- Aluminum Doped Zinc Oxide (AZO(T))
- Cerium Oxide (CeO2(T))
- Tungsten Trioxide (WO3(T))
- Hafnium Oxide (HfO2(T))
- Indium Gallium Zinc Oxide (IGZO(T))
- Nitride target material
- Sulfide target material
-
Antimony tellurium selenium boron target material
- Magnesium Boride (MgB2(T))
- Lanthanu m Hexaboride (LaB6(T))
- Titanium Diboride (TiB2(T))
- Zinc Selenide (ZnSe(T))
- Zinc Antimonide (Zn4Sb3(T))
- Cadmium Selenide (CdSe(T))
- Indium Telluride (In2Te3(T))
- Tin Selenide (SnSe(T))
- Germanium Antimonide (GeSb(T))
- Antimony Selenide (Sb2Se3(T))
- Antimony Telluride (Sb2Te3(T))
- Bismuth Telluride (Bi2Te3(T))
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Metal target material
- Interface thermal conductive materials
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Compound raw materials
-
Oxide
- Tungsten Trioxide (WO3)
- Hafnium Dioxide (HfO2)
- Ytterbium Oxide (Yb2O3)
- Erbium Oxide (Er2O3)
- Lanthanu m Oxide (La2O3)
- Cerium Dioxide (CeO2)
- Tin Dioxide (SnO2)
- Niobium Oxide (Nb2O3)
- Zirconium Dioxide (ZrO2)
- Zinc Oxide (ZnO)
- Copper Oxide (CuO)
- Magnetite (Fe3O4)
- Titanium Dioxide (TiO2)
- Samarium (III) oxide (Sm2O3)
- Silicon Dioxide (SiO2)
- Aluminum Oxide (Al2O3)
- Gallium Oxide Ga2O3(Powder)
- Sulfide
- Fluoride
- Nitride
- Carbide
-
Halide
- Gallium Chloride (GaCl3)
- Indium Chloride (InCl3)
- Aluminum Chloride (AlCl3)
- Bismuth Chloride (BiCl3)
- Cadmium Chloride (CdCl2)
- Chromium Chloride (CrCl2)
- Chromium Chloride Hydrate (CrCl2(H2O)n)
- Copper Chloride (CuCl)
- Copper Chloride II (CuCl2)
- Cesium Chloride (CsCl)
- Europium Chloride (EuCl3)
- Europium Chloride Hydrate (EuCl3.xH2O)
- Magnesium Chloride (MgCl2)
- Sodium Chloride (NaCl)
- Nickel Chloride (NiCl2)
- Indium Chloride (InCl3)
- Indium Nitrate Hydrate (In(NO3).xH2O)
- Rubidium Chloride (RbCl3)
- Antimony Chloride (SbCl3)
- Samarium Chloride (SmCl3)
- Samarium Chloride Hydrate (SmCl3.xH2O)
- Scandium Chloride (ScCl3)
- Tellurium Chloride (TeCl3)
- Tantalum Chloride (TaCl5)
- Tungsten Chloride (WCl6)
- Aluminum Bromide (AlBr3)
- Barium Bromide (BaBr2)
- Cobalt Bromide (CoBr2)
- Cadmium Bromide (CdBr2)
- Gallium Bromide (GaBr3)
- Gallium Bromide Hydrate (GaBr3.xH2O)
- Nickel Bromide (NiBr2)
- Potassium Bromide (KBr)
- Lead Bromide (PbBr2)
- Zirconium Bromide (ZrBr2)
- Bismuth Bromide (BiBr4)
- Bismuth Iodide (BiI3)
- Calcium Iodide (CaI2)
- Gadolinium Iodide (GdI2)
- Cobalt Iodide (CoI2)
- Cesium Iodide (CsI)
- Europium Iodide (EuI2)
- Lithium Iodide (LiI)
- Lithium Iodide Hydrate (LiI.xH2O)
- Gallium Iodide (GaI3)
- Gadolinium Iodide (GdI3)
- Indium Iodide (InI3)
- Potassium Iodide (KI)
- Lanthanu m Iodide (LaI3)
- Lutetium Iodide (LuI3)
- Magnesium Iodide (MgI2)
- Sodium Iodide (NaI)
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Oxide
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Epitaxial Wafer/Films
-
Inorganic epitaxial wafer/film
- Gallium Oxide epitaxial wafer (Ga2O3)
- Platinum/Titanium/Silicon Dioxide/Silicon epitacial wafer (Pt/Ti/SiO2/Si)
- Lithium niobate thin film epitaxial wafer
- Lithium tantalate thin film epitaxial wafer
- InGaAs epitaxial wafer
- Gallium Nitride(GaN) epitaxial wafer
- Yttrium Iron Garnet(YIG) epitaxial wafers
- Fullerenes&Fullerols
- Epitaxial silicon wafer
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Inorganic epitaxial wafer/film
- Material testing analysis
- Scientific research equipment
- Material processing
- Conductive Glass
- Fine Ceramics
Material testing analysis
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Material test analysis in scientific research and engineering practice. Through testing and analysis, we can obtain accurate data and reliable results, provide reliable basis for material selection, design and application, and promote the development of science and technology. |
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The main test items are shown in the table below (not limited to):
| Name | < span microsoft = "" font-siZe: = ""> Content | 1 | High-power turn target X-ray diffuser | Cerery XRD, residual stress, conventional XRD scanning, phase-phase analysis, physical quantity analysis, crystalline degree, precision calculation of crystal parameters, grain size (micro-microscopic (micro Stress), refined structure of RIETVELD structure. | 2 | High-power rotor X-ray diffraction instrument | td class = "et2" x: str = "" width = "533" style = "border-color: RGB (191, 191, 191); border-width: 1px; border-style: solid;"> Cerery XRD , Conventional XRD scanning, phase -phase analysis, quantitative analysis of physical phase, crystalline, crystal parameter accurate calculation, grain size (micro stress), RIETVELD structure refined, etc.3 | high-resolution powder X-ray diffraction instrument | conventional XRD scanning, conventional XRD scanning, " Phase fixed analysis, quantitative analysis of objects, crystallinity, precise calculation of crystal parameters, grain dimensions (microscopic stress), RIETVELD structural refinement, etc. & nbsp; & nbsp; | 4 | Micrococular two-dimensional X-ray diffraction instrument td> | > Micro -zone XRD analysis, residual stress measurement, weaving measurement, high -throughput XRD characteristics, etc. | 5 | Original X-ray diffuser | Different atmosphere high and low temperature X Radio division; research on the in original chemical reactions of materials, the research of the original electro -catalytic X -ray diffraction research; the study of the crystal structure evolution of the material under the action of the electric field. | 6 | high-resolution X-ray diffraction instrument | Analysis (GID): Accurately analyze the composition, order, orientation, etc.; 2. Plum reflection analysis (XRR): Precise analysis of the thickness, density, and coarseness of polycrystalline, single crystal multi -layer thin film; 3 , High -resolution (HRXRD): For high -quality extension film and single crystal materials, carry out a swing curve to analyze the spatial map MAPPING; 4. Research on the annealing research of single -crystal extension membranes and other materials Diffraction representation. | 7 | Micro-burnt target single crystal X-ray diffraction instrument td> | > 1. Single crystal atomic coordinates, key length keys, configuration type, thermal vibration of atoms, electronic distribution and other structural information table signs; 2. Micro structures such as monocrystalline atoms, defects, and bonding functions; 3. Structural analysis of the low -temperature ordering of the single crystal material. | 8 | Laser co-focusing micro Man spectrometer | td class = "et2" x: str = "" width = "533" style = "border-color: RGB (191, 191, 191); border-width: 1px; border-style: solid;"> 1. Samples such as powder, block, liquid and other samples are measured by the Micro area Raman spectrum, and fluorescent spectrum measurement can also be performed (473nm ~ 1000nm);9 | positive \ inverted atomic microscope | 1. Obtain the three -dimensional shape of the sample surface under normal pressure conditions, without damage to the sample; 2. It can perform a variety of imaging modes such as horizontal force, phase, static power, voltage power, and surface potential; 3. A characteristics of dispersing multi -point, line, noodle electrical/magnetic/mechanical properties, etc. (PFM \ MFM \ STM, etc.); 4. You can perform aFM \ PFM \ MFM at high temperature, which can be performed in a liquid. AFM and other representations of samples; 5. Can be used with Raman spectrals, and at the same time obtain the appearance and component information of the sample. & nbsp; | 10 | Three-dimensional X-ray microscope | QREx scan and scan and Three -dimensional non -destructive imaging studies sample micro structure and defects, including form, pores, cracks, and so on. | 11 | High-resolution X-ray microscope | 1, defect analysis: The distribution of defects such as material slight cracks, the degree of bonding of the matrix and the form of the interface, as well as local fiber orientation and thickness, particle size and shape to simulate the process of germinating, extending and merging in the three -dimensional space. 2. Three -dimensional shape analysis: The size and distribution of the material pores, the type, radius, length, orientation, and distortions of the fiber type, the type, length, orientation, and distortions of the fiber. Reconstruction. | 12 | field launch scanning electron microscope | block solid, fiber, fiber, Observation and dimensional analysis of the surface or section of the film and other materials; observation and dimensional analysis of the shape of micro -nano -scale particles and holes; micro -zone elements and its distribution tests. | 13 | X-ray optoelectronics spectrum | X-ray optical electronics spectrum spectrum Yiyi is mainly for the type, price, chemical environment and relative content of the element on the surface of the solid sample about 10nm thickness, and has spectrals and imaging functions; It is widely used in various disciplines related to solid materials, including polymer materials , Metal, Semiconductor, and various film research areas. | 14 | Field transmission electron microscope (Fe-Tem) | Materials Analysis of internal micro -structural analysis; Analysis of the element composition and distribution of the sample micro -zone; Analysis of the micro -structured material under heating or freezing; Mechanical performance test. |
15 | Field transmission electron microscope (Fe-Tem) | Analysis Internal micro -structures of the material; Analyze the element composition and distribution of the sample micro -zone; TEM and STEM mode three -dimensional reconstruction. | 16 | transmitted electron microscope (TEM) | = "ET2" X: Str = "" Width = "533" STYLE = "Border-COLOR: RGB (191, 191, 191); Border-Width: 1px; Border-Style: Solid;"> Analyze the crystals of metal materials Micro -structures such as defects, crystal, and phase boundaries;17 | Environment scanning Electron microscope (ESEM) | Metal, ceramics, polymer and composite material analysis of the surface or section micro -regional appearance Biological samples or water -containing sample surface micro -area appearance analysis (samples can not be treated on the surface, keeping the original state of the same shape, in maintaining the original state Observation and analysis under the circumstances) Observation of particles, porous materials or fiber shapes and their dimensional analysis The qualitative and semi -quantitative analysis of the micro -region component of the solid sample |
18 | & NBSP; Scan the electronic microscope (SEM) | Golden solid sample surface micro-area observation; material disconnection shape; Analysis of appearance and its internal structural analysis; particle or fiber shape observation and size analysis | > 19 | Scanning probe microscope (SPM) | 材料表面形貌、相组成分析;材料表面各种缺陷、污染情况分析;材料表面力性能研究;材料表面电、磁性能研究 | tr>20 | X-ray diffuser (XRD) | phase fixed or quantitative analysis; crystal structure analysis ; Crystal determination (multi -peak separation method); grain extraction measurement measurement; research on the change of temperature changes. | 21 | small horn X-ray scatter | Analysis of crystal, chip crystal, fillers, pores, and hard sections) size, shape, and distribution of size; analysis of particle scattered state; research on interface structure; characterization of particle form in the solution. | 22 | 600MHz nuclear magnetic resonance wave spectrometer (Nmr) | Analysis of organic compound structure; analysis of natural product molecular structure; analysis of biomolecular and protein structure; analysis of polymer material composition and chain structure | 23 | 400MHz MRI (NMR) | Analysis of organic compounds and natural product molecular structure; analysis of polymer chain structure; study of polymer material clustering structure structure And the movement behavior of its polymer chain; study the interaction between the polymer chain and the compatibility of the mixed high molecules | 24 | Fourier Change the infrared spectrometer | Qualitative analysis of compounds; analysis of polymer chain structure; analysis of mixture components; research on interaction between molecules | TR>25 | Fourier transform micro-infrared spectrometer | trace sample qualitative analysis; single fiber analysis ; Micro -region component distribution analysis | 26 | Qi phase chromatography-mass spectrometer use instrument | Analysis of organic compound structure; the qualitative and quantitative analysis of the composition of organic mixture; the qualitative analysis of organic objects in water samples or solid samples; TR height = "36" style = "height: 13.5pt;"> | 27 | UV-Visible spectrometer | small molecular compound structure analysis; analysis of small molecular compound composition; transmission of thin film samples Analysis; reflection and transmission analysis of solution, lotion or solid powder samples | 28 < /td> | Direct coupling plasma launch spectrometer | CU, PB, CD, CR, Ni, Ni, Zn, AS, AS, FE, BI, P, K, MG, MG, MG, SI, SC, SN, Sn, Sn, Sn, Sn, Sn, Sn, Sn, Sn MN, ZR, AG, SN, SB, BA and other 70 metals and non -metallic elements | 29 | Elemental analyzer | Analyze the content of C, H, N, O, S elements in organic samples | 30 | inductor coupling plasma launch spectrometer | The content of multiple metals and non-metallic elements in inorganic or organic samples | 31 | Glit List Discharge spectrometer (GDS) | The matrix of conductive materials and non-conductive materials, plating (coating Analysis of chemical element content in layers; deep quantitative analysis of elements such as thermal treatment workpieces (carburizing, nitrogen seepage); analysis of the surface of conductive materials covered with a layer or multi -layer conductive or non -conductive electrical (coating) analysis; non The surface of the conductor material is covered with a layer or multi -layer conductive or non -conductive electrical coating (coating) analysis of chemical elements. | 32 | steady-state/transient fluorescent spectrometer | Structural analysis; quantitative analysis of fluorescent characteristic components; testing fluorescent quantum yield; detection of fluorescent life and phosphorus life; time resolution of fluorescent spectrum measurement; fluorescent polarizing properties. | 33 | laser micro-raman (Micro-Raman) td> | > Measure the size of the rubber beam, colloidal particles and its distribution; determine the weight of the polymer weight; study the structure of the molecular chain in the polymer solution and its interaction with the solvent molecules; study the composition of protein, polysaccharides and its aggregation process Essence | 34 | Advanced rotation flow system (ARES) | td class = "et2" x: str = "" width = "533" style = "border-color: RGB (191, 191, 191); border-width: 1px; border-style: solid;"> determine thermoplastic aggregation The steady -state and dynamic flow -learning parameters of object melts; determine the polymer solution solution and other low viscosity fluids; determine the current variable performance of the current transformer; determine the dielectric performance of the polymop; determine the pulp of the polymer Stretching performance.35 | laser micro-raman (Micro-Raman) td> | > Analysis of material chemical structure (analysis of non -destructive qualitative analysis); analysis of material clustering state structure, crystal changes and defects; analysis of surface components and depth distribution of composition; polymer structure changes, compatibility, stress relaxation, and research. | 36 | Gel penetration chromatography-light scattered shooting instrument | determine Absolute molecular weight and distribution that can solve the polymer that can dissolve tetrahydrocar. | 37 |
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