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Dihedral (Shanghai) Science and Technology Co., Ltd
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Semiconductor crystal
Elemental semiconductor
Diamond (C)
Silicon (Si)
Germanium (Ge)
Compound semiconductor
Gallium oxide (Ga2O3)
Gallium nitride (GaN)
Silicon carbide (SiC)
Gallium arsenide (GaAs)
Indium phosphide (InP)
Gallium antimonide (GaSb)
Indium arsenide (InAs)
Zinc oxide (ZnO)
Cadmium zinc telluride (CdZnTe)
Aluminum Nitride (AlN) crystal/substrate/film
Single crystal substrate
Multifunctional single crystal substrate
Barium titanate (BaTiO3)
Strontium titanate (SrTiO3)
Iron doped strontium titanate (Fe:SrTiO3)
Neodymium doped strontium titanate (Nd:SrTiO3)
Aluminium oxide (Al2O3)
Potassium tantalum oxide (KTaO3)
Lead magnesium niobate–lead titanate (PMN-PT)
Magnesium oxide (MgO)
Magnesium aluminate spinel (MgAl2O4)
Lithium aluminate (LiAlO2)
Lanthanu m aluminate (LaAlO3)
Lanthanu m strontium aluminate (LaSrAlO4)
(La,Sr)(Al,Ta)O3
Neodymium gallate (NdGaO3)
Terbium gallium garnet (TGG)
Gadolinium gallium garnet (GGG)
Sodium chloride (NaCl)
Potassium bromide (KBr)
Potassium chloride (KCl)
Functional crystal
Optical window
Magnesium fluoride (MgF2)
Calcium fluoride (CaF2)
Barium fluoride (BaF2)
Lithium fluoride (LiF)
Yttrium aluminium garnet (YAG)
Scintillation crystal
Cerium doped lutetium yttrium orthosilicate (Ce:LYSO)
Cerium doped yttrium aluminium garnet (Ce:YAG)
Cerium doped yttrium aluminium perovskite (Ce:YAP)
Bismuth germanate (BGO)
Cadmium tungstate (CdWO4)
Ce:CLLB crystal
Laser crystal
Rare earth doped lithium yttrium fluoride (RE:LiYF4)
Rare earth doped lithium lutetium fluoride (RE:LiLuF4)
Ytterbium doped yttrium aluminium garnet (Yb:YAG)
Neodymium doped yttrium aluminium garnet (Nd:YAG)
Erbium doped yttrium aluminium garnet (Er:YAG)
Holmium doped yttrium aluminium garnet (Ho:YAG)
Nd,Yb,Er,Tm,Ho,Cr,Lu Infrared laser crystal
N* crystal
Lithium niobate (LiNbO3)
Lithium tantalate (LiTaO3)
Potassium hydrogen phthalate (KAP)
Potassium titanyl phosphate (KTP)
Quartz (SiO2)
Titanium dioxide (TiO2)
Tellurium dioxide (TeO2)
Yttrium aluminate (YAlO3)
Iceland Spar
Metal single crystal
Aluminum
Copper single crystal
Material testing analysis
Material testing analysis
Material processing
Spherical, planar, and prism processing
Scientific research equipment
Helium mass spectrometer leak detector
UV sterilizer
Polishing machine
Heating furnace
Epitaxial Wafer/Films
Inorganic epitaxial wafer/film
Gallium Oxide epitaxial wafer (Ga2O3)
Platinum/Titanium/Silicon Dioxide/Silicon epitacial wafer (Pt/Ti/SiO2/Si)
Lithium niobate thin film epitaxial wafer
Lithium tantalate thin film epitaxial wafer
InGaAs epitaxial wafer
Gallium Nitride(GaN) epitaxial wafer
Yttrium Iron Garnet(YIG) epitaxial wafers
Fullerenes&Fullerols
Epitaxial silicon wafer
Conductive Glass
ITO/FTO
Indium Tin Oxide (ITO)
Fluorine-doped Tin Oxide (FTO)
Fine Ceramics
Ceramic substrate/Ceramic tubes
Aluminum Oxide ceramic (Al2O3(ceramic))
Silicon Nitride ceramic (Si3N4(ceramic))
Aluminum Nitride ceramic (AlN(ceramic))
Yttria-stabilized zirconia (YSZ)
Yttrium stabilized zirconia YSZ ceramic tube
2-D material
2-D crystal
Tin selenide (SnSe2)
Tungsten sulfide (WS2)
Tungsten selenide (WSe2)
Tungsten telluride (WTe2)
Rhenium sulfide (ReS2)
Rhenium selenide (ReSe2)
Molybdenum selenide (MoSe2)
Layered transition metal compound
Iron chloride (FeCl2)
Niobium sulfide (NbS3)
Gallium telluride iodide (GaTeI)
Indium selenide (InSe)
Copper indium phosphide sulfide (CuInP2S6)
Tungsten sulfide selenide (WSSe)
Iron germanium telluride (Fe3GeTe2)
Nickel iodide (NiI2)
Iron phosphorus sulfide (FePS3)
Manganese phosphorus selenide (MnPSe3)
Manganese phosphorus sulfide (MnPS3)
Interface thermal conductive materials
Metal thermal conductive paste
Gallium Indium Tin Zinc (GaInSnZn)
Gallium Indium Tin Zinc Silver (GaInSnZnAg)
Gallium Indium Tin Silver (GaInSnAg)
Liquid alloy
Gallium Indium Tin (GaInSn)
Gallium Indium Tin Zinc-P (GaInSnZn-P)
Gallium Indium Tin Zinc-U (GaInSnZn-U)
Metal thermal conductivity plate
Bismuth Tin Indium (BiSnIn)
Bismuth Tin Indium Zinc (BiSnInZn)
Bismuth Tin Indium Silver (BiSnInAg)
High-purity element
Non-metallic
Arsenic (As)
Selenium (Se)
Tellurium (Te)
Carbon powder (C)
Metal
Scandium (Sc)
Titanium (Ti)
Indium (In)
Gallium (Ga)
Bismuth (Bi)
Tin (Sn)
Zinc (Zn)
Cadmium (Cd)
Antimony (Sb)
Copper (Cu)
Nickel (Ni)
Molybdenum (Mo)
Aluminium (Al)
Rhenium (Re)
Hafnium (Hf)
Vanadium (V)
Chromium (Cr)
Iron (Fe)
Cobalt (Co)
Zirconium (Zr)
Niobium (Nb)
Tungsten (W)
Germanium (Ge)
Iron(Fe)
Compound raw materials
Oxide
Tungsten Trioxide (WO3)
Hafnium Dioxide (HfO2)
Ytterbium Oxide (Yb2O3)
Erbium Oxide (Er2O3)
Lanthanu m Oxide (La2O3)
Cerium Dioxide (CeO2)
Tin Dioxide (SnO2)
Niobium Oxide (Nb2O3)
Zirconium Dioxide (ZrO2)
Zinc Oxide (ZnO)
Copper Oxide (CuO)
Magnetite (Fe3O4)
Titanium Dioxide (TiO2)
Samarium (III) oxide (Sm2O3)
Silicon Dioxide (SiO2)
Aluminum Oxide (Al2O3)
Gallium Oxide Ga2O3(Powder)
Sulfide
Copper Sulfide (CuS)
Zinc Sulfide (ZnS)
Antimony Sulfide (SbS)
Molybdenum Disulfide (MoS2)
Tin Disulfide (SnS2)
Tungsten Disulfide (WS2)
Fluoride
Lithium Fluoride (LiF)
Calcium Fluoride (CaF2)
Barium Fluoride (BaF2)
Magnesium Fluoride (MgF2)
Aluminum Fluoride (AlF3)
Lanthanu m Fluoride (LaF3)
Yttrium Fluoride (YF3)
Ytterbium Fluoride (YbF3)
Sodium Hexafluoroaluminate (Na3Al3F6)
Nitride
Boron Nitride (BN)
Aluminum Nitride (AlN)
Silicon Nitride (SiN)
Titanium Nitride (TiN)
Vanadium Nitride (VN)
Magnesium Nitride (MgN)
Zirconium Nitride (ZrN)
Hafnium Nitride (HfN)
Carbide
Boron Carbide (BC)
Silicon Carbide (SiC)
Titanium Carbide (TiC)
Vanadium Carbide (VC)
Molybdenum Carbide (MoC)
Niobium Carbide (NbC)
Hafnium Carbide (HfC)
Tantalum Carbide (TaC)
Halide
Gallium Chloride (GaCl3)
Indium Chloride (InCl3)
Aluminum Chloride (AlCl3)
Bismuth Chloride (BiCl3)
Cadmium Chloride (CdCl2)
Chromium Chloride (CrCl2)
Chromium Chloride Hydrate (CrCl2(H2O)n)
Copper Chloride (CuCl)
Copper Chloride II (CuCl2)
Cesium Chloride (CsCl)
Europium Chloride (EuCl3)
Europium Chloride Hydrate (EuCl3.xH2O)
Magnesium Chloride (MgCl2)
Sodium Chloride (NaCl)
Nickel Chloride (NiCl2)
Indium Chloride (InCl3)
Indium Nitrate Hydrate (In(NO3).xH2O)
Rubidium Chloride (RbCl3)
Antimony Chloride (SbCl3)
Samarium Chloride (SmCl3)
Samarium Chloride Hydrate (SmCl3.xH2O)
Scandium Chloride (ScCl3)
Tellurium Chloride (TeCl3)
Tantalum Chloride (TaCl5)
Tungsten Chloride (WCl6)
Aluminum Bromide (AlBr3)
Barium Bromide (BaBr2)
Cobalt Bromide (CoBr2)
Cadmium Bromide (CdBr2)
Gallium Bromide (GaBr3)
Gallium Bromide Hydrate (GaBr3.xH2O)
Nickel Bromide (NiBr2)
Potassium Bromide (KBr)
Lead Bromide (PbBr2)
Zirconium Bromide (ZrBr2)
Bismuth Bromide (BiBr4)
Bismuth Iodide (BiI3)
Calcium Iodide (CaI2)
Gadolinium Iodide (GdI2)
Cobalt Iodide (CoI2)
Cesium Iodide (CsI)
Europium Iodide (EuI2)
Lithium Iodide (LiI)
Lithium Iodide Hydrate (LiI.xH2O)
Gallium Iodide (GaI3)
Gadolinium Iodide (GdI3)
Indium Iodide (InI3)
Potassium Iodide (KI)
Lanthanu m Iodide (LaI3)
Lutetium Iodide (LuI3)
Magnesium Iodide (MgI2)
Sodium Iodide (NaI)
Sputtering Target
Metal target material
Gold (Au(T))
Silver (Ag(T))
Platinum (Pt(T))
Palladium (Pd(T))
Ruthenium (Ru(T))
Iridium (Ir(T))
Aluminium (Al(T))
Copper (Cu(T))
Titanium (Ti(T))
Nickel (Ni(T))
Chromium (Cr(T))
Cobalt (Co(T))
Iron (Fe(T))
Manganese (Mn(T))
Zinc (Zn(T))
Vanadium (V(T))
Tungsten (W(T))
Hafnium (Hf(T))
Niobium (Nb(T))
Molybdenum (Mo(T))
Lanthanu m (La (T))
Cerium (Ce (T))
Praseodymium (Pr (T))
Neodymium (Nd (T))
Samarium (Sm (T))
Europium (Eu (T))
Gadolinium (Gd (T))
Terbium (Tb (T))
Dysprosium (Dy (T))
Holmium (Ho (T))
Erbium (Er (T))
Thulium (Tm (T))
Ytterbium (Yb (T))
Lutetium (Lu (T))
Alloy target material
Nickel-Iron (NiFe(T))
Nickel-Vanadium (NiV(T))
Nickel-Chromium (NiCr(T))
Aluminum-Silicon-Copper (AlSiCu(T))
Titanium-Zirconium (TiZr(T))
Tungsten-Titanium (WTi(T))
Semiconductor target material
Carbon (C(T))
Silicon (Si(T))
Germanium (Ge(T))
Boron (B(T))
Antimony (Sb(T))
Tellurium (Te(T))
Oxide target material
Aluminum Oxide (Al2O3(T))
Silicon Dioxide (SiO2(T))
Titanium Dioxide (TiO2(T))
Chromium Oxide (Cr2O3(T))
Nickel Oxide (NiO(T))
Copper Oxide (CuO(T))
Zinc Oxide (ZnO(T))
Zirconium Oxide (ZrO2(T))
Indium Tin Oxide (ITO(T))
Indium Zinc Oxide (IZO(T))
Aluminum Doped Zinc Oxide (AZO(T))
Cerium Oxide (CeO2(T))
Tungsten Trioxide (WO3(T))
Hafnium Oxide (HfO2(T))
Indium Gallium Zinc Oxide (IGZO(T))
Nitride target material
Boron Nitride (BN(T))
Aluminum Nitride (AlN(T))
Silicon Nitride (Si3N4(T))
Titanium Nitride (TiN(T))
Zirconium Nitride (ZrN(T))
Tantalum Nitride (TaN(T))
Sulfide target material
Iron Sulfide (FeS(T))
Zinc Sulfide (ZnS(T))
Copper Sulfide (CuS(T))
Gallium Sulfide (Ga2S3(T))
Indium Sulfide (In2S3(T))
Molybdenum Sulfide (MoS2(T))
Antimony Sulfide (SbS3(T))
Tin Sulfide (SnS(T))
Cadmium Sulfide (CdS(T))
Copper Zinc Tin Sulfide (Cu2ZnSnS4(T))
Antimony tellurium selenium boron target material
Magnesium Boride (MgB2(T))
Lanthanu m Hexaboride (LaB6(T))
Titanium Diboride (TiB2(T))
Zinc Selenide (ZnSe(T))
Zinc Antimonide (Zn4Sb3(T))
Cadmium Selenide (CdSe(T))
Indium Telluride (In2Te3(T))
Tin Selenide (SnSe(T))
Germanium Antimonide (GeSb(T))
Antimony Selenide (Sb2Se3(T))
Antimony Telluride (Sb2Te3(T))
Bismuth Telluride (Bi2Te3(T))
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Semiconductor crystal
Elemental semiconductor
Diamond (C)
Silicon (Si)
Germanium (Ge)
Compound semiconductor
Gallium oxide (Ga2O3)
Gallium nitride (GaN)
Silicon carbide (SiC)
Gallium arsenide (GaAs)
Indium phosphide (InP)
Gallium antimonide (GaSb)
Indium arsenide (InAs)
Zinc oxide (ZnO)
Cadmium zinc telluride (CdZnTe)
Aluminum Nitride (AlN) crystal/substrate/film
Functional crystal
Optical window
Magnesium fluoride (MgF2)
Calcium fluoride (CaF2)
Barium fluoride (BaF2)
Lithium fluoride (LiF)
Yttrium aluminium garnet (YAG)
Scintillation crystal
Cerium doped lutetium yttrium orthosilicate (Ce:LYSO)
Cerium doped yttrium aluminium garnet (Ce:YAG)
Cerium doped yttrium aluminium perovskite (Ce:YAP)
Bismuth germanate (BGO)
Cadmium tungstate (CdWO4)
Ce:CLLB crystal
Laser crystal
Rare earth doped lithium yttrium fluoride (RE:LiYF4)
Rare earth doped lithium lutetium fluoride (RE:LiLuF4)
Ytterbium doped yttrium aluminium garnet (Yb:YAG)
Neodymium doped yttrium aluminium garnet (Nd:YAG)
Erbium doped yttrium aluminium garnet (Er:YAG)
Holmium doped yttrium aluminium garnet (Ho:YAG)
Nd,Yb,Er,Tm,Ho,Cr,Lu Infrared laser crystal
N* crystal
Lithium niobate (LiNbO3)
Lithium tantalate (LiTaO3)
Potassium hydrogen phthalate (KAP)
Potassium titanyl phosphate (KTP)
Quartz (SiO2)
Titanium dioxide (TiO2)
Tellurium dioxide (TeO2)
Yttrium aluminate (YAlO3)
Iceland Spar
Metal single crystal
Aluminum
Copper single crystal
2-D material
2-D crystal
Tin selenide (SnSe2)
Tungsten sulfide (WS2)
Tungsten selenide (WSe2)
Tungsten telluride (WTe2)
Rhenium sulfide (ReS2)
Rhenium selenide (ReSe2)
Molybdenum selenide (MoSe2)
Layered transition metal compound
Iron chloride (FeCl2)
Niobium sulfide (NbS3)
Gallium telluride iodide (GaTeI)
Indium selenide (InSe)
Copper indium phosphide sulfide (CuInP2S6)
Tungsten sulfide selenide (WSSe)
Iron germanium telluride (Fe3GeTe2)
Nickel iodide (NiI2)
Iron phosphorus sulfide (FePS3)
Manganese phosphorus selenide (MnPSe3)
Manganese phosphorus sulfide (MnPS3)
High-purity element
Non-metallic
Arsenic (As)
Selenium (Se)
Tellurium (Te)
Carbon powder (C)
Metal
Scandium (Sc)
Titanium (Ti)
Indium (In)
Gallium (Ga)
Bismuth (Bi)
Tin (Sn)
Zinc (Zn)
Cadmium (Cd)
Antimony (Sb)
Copper (Cu)
Nickel (Ni)
Molybdenum (Mo)
Aluminium (Al)
Rhenium (Re)
Hafnium (Hf)
Vanadium (V)
Chromium (Cr)
Iron (Fe)
Cobalt (Co)
Zirconium (Zr)
Niobium (Nb)
Tungsten (W)
Germanium (Ge)
Iron(Fe)
Single crystal substrate
Multifunctional single crystal substrate
Barium titanate (BaTiO3)
Strontium titanate (SrTiO3)
Iron doped strontium titanate (Fe:SrTiO3)
Neodymium doped strontium titanate (Nd:SrTiO3)
Aluminium oxide (Al2O3)
Potassium tantalum oxide (KTaO3)
Lead magnesium niobate–lead titanate (PMN-PT)
Magnesium oxide (MgO)
Magnesium aluminate spinel (MgAl2O4)
Lithium aluminate (LiAlO2)
Lanthanu m aluminate (LaAlO3)
Lanthanu m strontium aluminate (LaSrAlO4)
(La,Sr)(Al,Ta)O3
Neodymium gallate (NdGaO3)
Terbium gallium garnet (TGG)
Gadolinium gallium garnet (GGG)
Sodium chloride (NaCl)
Potassium bromide (KBr)
Potassium chloride (KCl)
Sputtering Target
Metal target material
Gold (Au(T))
Silver (Ag(T))
Platinum (Pt(T))
Palladium (Pd(T))
Ruthenium (Ru(T))
Iridium (Ir(T))
Aluminium (Al(T))
Copper (Cu(T))
Titanium (Ti(T))
Nickel (Ni(T))
Chromium (Cr(T))
Cobalt (Co(T))
Iron (Fe(T))
Manganese (Mn(T))
Zinc (Zn(T))
Vanadium (V(T))
Tungsten (W(T))
Hafnium (Hf(T))
Niobium (Nb(T))
Molybdenum (Mo(T))
Lanthanu m (La (T))
Cerium (Ce (T))
Praseodymium (Pr (T))
Neodymium (Nd (T))
Samarium (Sm (T))
Europium (Eu (T))
Gadolinium (Gd (T))
Terbium (Tb (T))
Dysprosium (Dy (T))
Holmium (Ho (T))
Erbium (Er (T))
Thulium (Tm (T))
Ytterbium (Yb (T))
Lutetium (Lu (T))
Alloy target material
Nickel-Iron (NiFe(T))
Nickel-Vanadium (NiV(T))
Nickel-Chromium (NiCr(T))
Aluminum-Silicon-Copper (AlSiCu(T))
Titanium-Zirconium (TiZr(T))
Tungsten-Titanium (WTi(T))
Semiconductor target material
Carbon (C(T))
Silicon (Si(T))
Germanium (Ge(T))
Boron (B(T))
Antimony (Sb(T))
Tellurium (Te(T))
Oxide target material
Aluminum Oxide (Al2O3(T))
Silicon Dioxide (SiO2(T))
Titanium Dioxide (TiO2(T))
Chromium Oxide (Cr2O3(T))
Nickel Oxide (NiO(T))
Copper Oxide (CuO(T))
Zinc Oxide (ZnO(T))
Zirconium Oxide (ZrO2(T))
Indium Tin Oxide (ITO(T))
Indium Zinc Oxide (IZO(T))
Aluminum Doped Zinc Oxide (AZO(T))
Cerium Oxide (CeO2(T))
Tungsten Trioxide (WO3(T))
Hafnium Oxide (HfO2(T))
Indium Gallium Zinc Oxide (IGZO(T))
Nitride target material
Boron Nitride (BN(T))
Aluminum Nitride (AlN(T))
Silicon Nitride (Si3N4(T))
Titanium Nitride (TiN(T))
Zirconium Nitride (ZrN(T))
Tantalum Nitride (TaN(T))
Sulfide target material
Iron Sulfide (FeS(T))
Zinc Sulfide (ZnS(T))
Copper Sulfide (CuS(T))
Gallium Sulfide (Ga2S3(T))
Indium Sulfide (In2S3(T))
Molybdenum Sulfide (MoS2(T))
Antimony Sulfide (SbS3(T))
Tin Sulfide (SnS(T))
Cadmium Sulfide (CdS(T))
Copper Zinc Tin Sulfide (Cu2ZnSnS4(T))
Antimony tellurium selenium boron target material
Magnesium Boride (MgB2(T))
Lanthanu m Hexaboride (LaB6(T))
Titanium Diboride (TiB2(T))
Zinc Selenide (ZnSe(T))
Zinc Antimonide (Zn4Sb3(T))
Cadmium Selenide (CdSe(T))
Indium Telluride (In2Te3(T))
Tin Selenide (SnSe(T))
Germanium Antimonide (GeSb(T))
Antimony Selenide (Sb2Se3(T))
Antimony Telluride (Sb2Te3(T))
Bismuth Telluride (Bi2Te3(T))
Interface thermal conductive materials
Metal thermal conductive paste
Gallium Indium Tin Zinc (GaInSnZn)
Gallium Indium Tin Zinc Silver (GaInSnZnAg)
Gallium Indium Tin Silver (GaInSnAg)
Liquid alloy
Gallium Indium Tin (GaInSn)
Gallium Indium Tin Zinc-P (GaInSnZn-P)
Gallium Indium Tin Zinc-U (GaInSnZn-U)
Metal thermal conductivity plate
Bismuth Tin Indium (BiSnIn)
Bismuth Tin Indium Zinc (BiSnInZn)
Bismuth Tin Indium Silver (BiSnInAg)
Compound raw materials
Oxide
Tungsten Trioxide (WO3)
Hafnium Dioxide (HfO2)
Ytterbium Oxide (Yb2O3)
Erbium Oxide (Er2O3)
Lanthanu m Oxide (La2O3)
Cerium Dioxide (CeO2)
Tin Dioxide (SnO2)
Niobium Oxide (Nb2O3)
Zirconium Dioxide (ZrO2)
Zinc Oxide (ZnO)
Copper Oxide (CuO)
Magnetite (Fe3O4)
Titanium Dioxide (TiO2)
Samarium (III) oxide (Sm2O3)
Silicon Dioxide (SiO2)
Aluminum Oxide (Al2O3)
Gallium Oxide Ga2O3(Powder)
Sulfide
Copper Sulfide (CuS)
Zinc Sulfide (ZnS)
Antimony Sulfide (SbS)
Molybdenum Disulfide (MoS2)
Tin Disulfide (SnS2)
Tungsten Disulfide (WS2)
Fluoride
Lithium Fluoride (LiF)
Calcium Fluoride (CaF2)
Barium Fluoride (BaF2)
Magnesium Fluoride (MgF2)
Aluminum Fluoride (AlF3)
Lanthanu m Fluoride (LaF3)
Yttrium Fluoride (YF3)
Ytterbium Fluoride (YbF3)
Sodium Hexafluoroaluminate (Na3Al3F6)
Nitride
Boron Nitride (BN)
Aluminum Nitride (AlN)
Silicon Nitride (SiN)
Titanium Nitride (TiN)
Vanadium Nitride (VN)
Magnesium Nitride (MgN)
Zirconium Nitride (ZrN)
Hafnium Nitride (HfN)
Carbide
Boron Carbide (BC)
Silicon Carbide (SiC)
Titanium Carbide (TiC)
Vanadium Carbide (VC)
Molybdenum Carbide (MoC)
Niobium Carbide (NbC)
Hafnium Carbide (HfC)
Tantalum Carbide (TaC)
Halide
Gallium Chloride (GaCl3)
Indium Chloride (InCl3)
Aluminum Chloride (AlCl3)
Bismuth Chloride (BiCl3)
Cadmium Chloride (CdCl2)
Chromium Chloride (CrCl2)
Chromium Chloride Hydrate (CrCl2(H2O)n)
Copper Chloride (CuCl)
Copper Chloride II (CuCl2)
Cesium Chloride (CsCl)
Europium Chloride (EuCl3)
Europium Chloride Hydrate (EuCl3.xH2O)
Magnesium Chloride (MgCl2)
Sodium Chloride (NaCl)
Nickel Chloride (NiCl2)
Indium Chloride (InCl3)
Indium Nitrate Hydrate (In(NO3).xH2O)
Rubidium Chloride (RbCl3)
Antimony Chloride (SbCl3)
Samarium Chloride (SmCl3)
Samarium Chloride Hydrate (SmCl3.xH2O)
Scandium Chloride (ScCl3)
Tellurium Chloride (TeCl3)
Tantalum Chloride (TaCl5)
Tungsten Chloride (WCl6)
Aluminum Bromide (AlBr3)
Barium Bromide (BaBr2)
Cobalt Bromide (CoBr2)
Cadmium Bromide (CdBr2)
Gallium Bromide (GaBr3)
Gallium Bromide Hydrate (GaBr3.xH2O)
Nickel Bromide (NiBr2)
Potassium Bromide (KBr)
Lead Bromide (PbBr2)
Zirconium Bromide (ZrBr2)
Bismuth Bromide (BiBr4)
Bismuth Iodide (BiI3)
Calcium Iodide (CaI2)
Gadolinium Iodide (GdI2)
Cobalt Iodide (CoI2)
Cesium Iodide (CsI)
Europium Iodide (EuI2)
Lithium Iodide (LiI)
Lithium Iodide Hydrate (LiI.xH2O)
Gallium Iodide (GaI3)
Gadolinium Iodide (GdI3)
Indium Iodide (InI3)
Potassium Iodide (KI)
Lanthanu m Iodide (LaI3)
Lutetium Iodide (LuI3)
Magnesium Iodide (MgI2)
Sodium Iodide (NaI)
Epitaxial Wafer/Films
Inorganic epitaxial wafer/film
Gallium Oxide epitaxial wafer (Ga2O3)
Platinum/Titanium/Silicon Dioxide/Silicon epitacial wafer (Pt/Ti/SiO2/Si)
Lithium niobate thin film epitaxial wafer
Lithium tantalate thin film epitaxial wafer
InGaAs epitaxial wafer
Gallium Nitride(GaN) epitaxial wafer
Yttrium Iron Garnet(YIG) epitaxial wafers
Fullerenes&Fullerols
Epitaxial silicon wafer
Material testing analysis
Material testing analysis
Scientific research equipment
Helium mass spectrometer leak detector
UV sterilizer
Polishing machine
Heating furnace
Material processing
Spherical, planar, and prism processing
Conductive Glass
ITO/FTO
Indium Tin Oxide (ITO)
Fluorine-doped Tin Oxide (FTO)
Fine Ceramics
Ceramic substrate/Ceramic tubes
Aluminum Oxide ceramic (Al2O3(ceramic))
Silicon Nitride ceramic (Si3N4(ceramic))
Aluminum Nitride ceramic (AlN(ceramic))
Yttria-stabilized zirconia (YSZ)
Yttrium stabilized zirconia YSZ ceramic tube
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Categories
Semiconductor crystal
Elemental semiconductor
Diamond (C)
Silicon (Si)
Germanium (Ge)
Compound semiconductor
Gallium oxide (Ga2O3)
Gallium nitride (GaN)
Silicon carbide (SiC)
Gallium arsenide (GaAs)
Indium phosphide (InP)
Gallium antimonide (GaSb)
Indium arsenide (InAs)
Zinc oxide (ZnO)
Cadmium zinc telluride (CdZnTe)
Aluminum Nitride (AlN) crystal/substrate/film
Functional crystal
Optical window
Magnesium fluoride (MgF2)
Calcium fluoride (CaF2)
Barium fluoride (BaF2)
Lithium fluoride (LiF)
Yttrium aluminium garnet (YAG)
Scintillation crystal
Cerium doped lutetium yttrium orthosilicate (Ce:LYSO)
Cerium doped yttrium aluminium garnet (Ce:YAG)
Cerium doped yttrium aluminium perovskite (Ce:YAP)
Bismuth germanate (BGO)
Cadmium tungstate (CdWO4)
Ce:CLLB crystal
Laser crystal
Rare earth doped lithium yttrium fluoride (RE:LiYF4)
Rare earth doped lithium lutetium fluoride (RE:LiLuF4)
Ytterbium doped yttrium aluminium garnet (Yb:YAG)
Neodymium doped yttrium aluminium garnet (Nd:YAG)
Erbium doped yttrium aluminium garnet (Er:YAG)
Holmium doped yttrium aluminium garnet (Ho:YAG)
Nd,Yb,Er,Tm,Ho,Cr,Lu Infrared laser crystal
N* crystal
Lithium niobate (LiNbO3)
Lithium tantalate (LiTaO3)
Potassium hydrogen phthalate (KAP)
Potassium titanyl phosphate (KTP)
Quartz (SiO2)
Titanium dioxide (TiO2)
Tellurium dioxide (TeO2)
Yttrium aluminate (YAlO3)
Iceland Spar
Metal single crystal
Aluminum
Copper single crystal
2-D material
2-D crystal
Tin selenide (SnSe2)
Tungsten sulfide (WS2)
Tungsten selenide (WSe2)
Tungsten telluride (WTe2)
Rhenium sulfide (ReS2)
Rhenium selenide (ReSe2)
Molybdenum selenide (MoSe2)
Layered transition metal compound
Iron chloride (FeCl2)
Niobium sulfide (NbS3)
Gallium telluride iodide (GaTeI)
Indium selenide (InSe)
Copper indium phosphide sulfide (CuInP2S6)
Tungsten sulfide selenide (WSSe)
Iron germanium telluride (Fe3GeTe2)
Nickel iodide (NiI2)
Iron phosphorus sulfide (FePS3)
Manganese phosphorus selenide (MnPSe3)
Manganese phosphorus sulfide (MnPS3)
High-purity element
Non-metallic
Arsenic (As)
Selenium (Se)
Tellurium (Te)
Carbon powder (C)
Metal
Scandium (Sc)
Titanium (Ti)
Indium (In)
Gallium (Ga)
Bismuth (Bi)
Tin (Sn)
Zinc (Zn)
Cadmium (Cd)
Antimony (Sb)
Copper (Cu)
Nickel (Ni)
Molybdenum (Mo)
Aluminium (Al)
Rhenium (Re)
Hafnium (Hf)
Vanadium (V)
Chromium (Cr)
Iron (Fe)
Cobalt (Co)
Zirconium (Zr)
Niobium (Nb)
Tungsten (W)
Germanium (Ge)
Iron(Fe)
Single crystal substrate
Multifunctional single crystal substrate
Barium titanate (BaTiO3)
Strontium titanate (SrTiO3)
Iron doped strontium titanate (Fe:SrTiO3)
Neodymium doped strontium titanate (Nd:SrTiO3)
Aluminium oxide (Al2O3)
Potassium tantalum oxide (KTaO3)
Lead magnesium niobate–lead titanate (PMN-PT)
Magnesium oxide (MgO)
Magnesium aluminate spinel (MgAl2O4)
Lithium aluminate (LiAlO2)
Lanthanu m aluminate (LaAlO3)
Lanthanu m strontium aluminate (LaSrAlO4)
(La,Sr)(Al,Ta)O3
Neodymium gallate (NdGaO3)
Terbium gallium garnet (TGG)
Gadolinium gallium garnet (GGG)
Sodium chloride (NaCl)
Potassium bromide (KBr)
Potassium chloride (KCl)
Sputtering Target
Metal target material
Gold (Au(T))
Silver (Ag(T))
Platinum (Pt(T))
Palladium (Pd(T))
Ruthenium (Ru(T))
Iridium (Ir(T))
Aluminium (Al(T))
Copper (Cu(T))
Titanium (Ti(T))
Nickel (Ni(T))
Chromium (Cr(T))
Cobalt (Co(T))
Iron (Fe(T))
Manganese (Mn(T))
Zinc (Zn(T))
Vanadium (V(T))
Tungsten (W(T))
Hafnium (Hf(T))
Niobium (Nb(T))
Molybdenum (Mo(T))
Lanthanu m (La (T))
Cerium (Ce (T))
Praseodymium (Pr (T))
Neodymium (Nd (T))
Samarium (Sm (T))
Europium (Eu (T))
Gadolinium (Gd (T))
Terbium (Tb (T))
Dysprosium (Dy (T))
Holmium (Ho (T))
Erbium (Er (T))
Thulium (Tm (T))
Ytterbium (Yb (T))
Lutetium (Lu (T))
Alloy target material
Nickel-Iron (NiFe(T))
Nickel-Vanadium (NiV(T))
Nickel-Chromium (NiCr(T))
Aluminum-Silicon-Copper (AlSiCu(T))
Titanium-Zirconium (TiZr(T))
Tungsten-Titanium (WTi(T))
Semiconductor target material
Carbon (C(T))
Silicon (Si(T))
Germanium (Ge(T))
Boron (B(T))
Antimony (Sb(T))
Tellurium (Te(T))
Oxide target material
Aluminum Oxide (Al2O3(T))
Silicon Dioxide (SiO2(T))
Titanium Dioxide (TiO2(T))
Chromium Oxide (Cr2O3(T))
Nickel Oxide (NiO(T))
Copper Oxide (CuO(T))
Zinc Oxide (ZnO(T))
Zirconium Oxide (ZrO2(T))
Indium Tin Oxide (ITO(T))
Indium Zinc Oxide (IZO(T))
Aluminum Doped Zinc Oxide (AZO(T))
Cerium Oxide (CeO2(T))
Tungsten Trioxide (WO3(T))
Hafnium Oxide (HfO2(T))
Indium Gallium Zinc Oxide (IGZO(T))
Nitride target material
Boron Nitride (BN(T))
Aluminum Nitride (AlN(T))
Silicon Nitride (Si3N4(T))
Titanium Nitride (TiN(T))
Zirconium Nitride (ZrN(T))
Tantalum Nitride (TaN(T))
Sulfide target material
Iron Sulfide (FeS(T))
Zinc Sulfide (ZnS(T))
Copper Sulfide (CuS(T))
Gallium Sulfide (Ga2S3(T))
Indium Sulfide (In2S3(T))
Molybdenum Sulfide (MoS2(T))
Antimony Sulfide (SbS3(T))
Tin Sulfide (SnS(T))
Cadmium Sulfide (CdS(T))
Copper Zinc Tin Sulfide (Cu2ZnSnS4(T))
Antimony tellurium selenium boron target material
Magnesium Boride (MgB2(T))
Lanthanu m Hexaboride (LaB6(T))
Titanium Diboride (TiB2(T))
Zinc Selenide (ZnSe(T))
Zinc Antimonide (Zn4Sb3(T))
Cadmium Selenide (CdSe(T))
Indium Telluride (In2Te3(T))
Tin Selenide (SnSe(T))
Germanium Antimonide (GeSb(T))
Antimony Selenide (Sb2Se3(T))
Antimony Telluride (Sb2Te3(T))
Bismuth Telluride (Bi2Te3(T))
Interface thermal conductive materials
Metal thermal conductive paste
Gallium Indium Tin Zinc (GaInSnZn)
Gallium Indium Tin Zinc Silver (GaInSnZnAg)
Gallium Indium Tin Silver (GaInSnAg)
Liquid alloy
Gallium Indium Tin (GaInSn)
Gallium Indium Tin Zinc-P (GaInSnZn-P)
Gallium Indium Tin Zinc-U (GaInSnZn-U)
Metal thermal conductivity plate
Bismuth Tin Indium (BiSnIn)
Bismuth Tin Indium Zinc (BiSnInZn)
Bismuth Tin Indium Silver (BiSnInAg)
Compound raw materials
Oxide
Tungsten Trioxide (WO3)
Hafnium Dioxide (HfO2)
Ytterbium Oxide (Yb2O3)
Erbium Oxide (Er2O3)
Lanthanu m Oxide (La2O3)
Cerium Dioxide (CeO2)
Tin Dioxide (SnO2)
Niobium Oxide (Nb2O3)
Zirconium Dioxide (ZrO2)
Zinc Oxide (ZnO)
Copper Oxide (CuO)
Magnetite (Fe3O4)
Titanium Dioxide (TiO2)
Samarium (III) oxide (Sm2O3)
Silicon Dioxide (SiO2)
Aluminum Oxide (Al2O3)
Gallium Oxide Ga2O3(Powder)
Sulfide
Copper Sulfide (CuS)
Zinc Sulfide (ZnS)
Antimony Sulfide (SbS)
Molybdenum Disulfide (MoS2)
Tin Disulfide (SnS2)
Tungsten Disulfide (WS2)
Fluoride
Lithium Fluoride (LiF)
Calcium Fluoride (CaF2)
Barium Fluoride (BaF2)
Magnesium Fluoride (MgF2)
Aluminum Fluoride (AlF3)
Lanthanu m Fluoride (LaF3)
Yttrium Fluoride (YF3)
Ytterbium Fluoride (YbF3)
Sodium Hexafluoroaluminate (Na3Al3F6)
Nitride
Boron Nitride (BN)
Aluminum Nitride (AlN)
Silicon Nitride (SiN)
Titanium Nitride (TiN)
Vanadium Nitride (VN)
Magnesium Nitride (MgN)
Zirconium Nitride (ZrN)
Hafnium Nitride (HfN)
Carbide
Boron Carbide (BC)
Silicon Carbide (SiC)
Titanium Carbide (TiC)
Vanadium Carbide (VC)
Molybdenum Carbide (MoC)
Niobium Carbide (NbC)
Hafnium Carbide (HfC)
Tantalum Carbide (TaC)
Halide
Gallium Chloride (GaCl3)
Indium Chloride (InCl3)
Aluminum Chloride (AlCl3)
Bismuth Chloride (BiCl3)
Cadmium Chloride (CdCl2)
Chromium Chloride (CrCl2)
Chromium Chloride Hydrate (CrCl2(H2O)n)
Copper Chloride (CuCl)
Copper Chloride II (CuCl2)
Cesium Chloride (CsCl)
Europium Chloride (EuCl3)
Europium Chloride Hydrate (EuCl3.xH2O)
Magnesium Chloride (MgCl2)
Sodium Chloride (NaCl)
Nickel Chloride (NiCl2)
Indium Chloride (InCl3)
Indium Nitrate Hydrate (In(NO3).xH2O)
Rubidium Chloride (RbCl3)
Antimony Chloride (SbCl3)
Samarium Chloride (SmCl3)
Samarium Chloride Hydrate (SmCl3.xH2O)
Scandium Chloride (ScCl3)
Tellurium Chloride (TeCl3)
Tantalum Chloride (TaCl5)
Tungsten Chloride (WCl6)
Aluminum Bromide (AlBr3)
Barium Bromide (BaBr2)
Cobalt Bromide (CoBr2)
Cadmium Bromide (CdBr2)
Gallium Bromide (GaBr3)
Gallium Bromide Hydrate (GaBr3.xH2O)
Nickel Bromide (NiBr2)
Potassium Bromide (KBr)
Lead Bromide (PbBr2)
Zirconium Bromide (ZrBr2)
Bismuth Bromide (BiBr4)
Bismuth Iodide (BiI3)
Calcium Iodide (CaI2)
Gadolinium Iodide (GdI2)
Cobalt Iodide (CoI2)
Cesium Iodide (CsI)
Europium Iodide (EuI2)
Lithium Iodide (LiI)
Lithium Iodide Hydrate (LiI.xH2O)
Gallium Iodide (GaI3)
Gadolinium Iodide (GdI3)
Indium Iodide (InI3)
Potassium Iodide (KI)
Lanthanu m Iodide (LaI3)
Lutetium Iodide (LuI3)
Magnesium Iodide (MgI2)
Sodium Iodide (NaI)
Epitaxial Wafer/Films
Inorganic epitaxial wafer/film
Gallium Oxide epitaxial wafer (Ga2O3)
Platinum/Titanium/Silicon Dioxide/Silicon epitacial wafer (Pt/Ti/SiO2/Si)
Lithium niobate thin film epitaxial wafer
Lithium tantalate thin film epitaxial wafer
InGaAs epitaxial wafer
Gallium Nitride(GaN) epitaxial wafer
Yttrium Iron Garnet(YIG) epitaxial wafers
Fullerenes&Fullerols
Epitaxial silicon wafer
Material testing analysis
Material testing analysis
Scientific research equipment
Helium mass spectrometer leak detector
UV sterilizer
Polishing machine
Heating furnace
Material processing
Spherical, planar, and prism processing
Conductive Glass
ITO/FTO
Indium Tin Oxide (ITO)
Fluorine-doped Tin Oxide (FTO)
Fine Ceramics
Ceramic substrate/Ceramic tubes
Aluminum Oxide ceramic (Al2O3(ceramic))
Silicon Nitride ceramic (Si3N4(ceramic))
Aluminum Nitride ceramic (AlN(ceramic))
Yttria-stabilized zirconia (YSZ)
Yttrium stabilized zirconia YSZ ceramic tube
Helium mass spectrometer leak detector
UV sterilizer
Polishing machine
Heating furnace
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