Diamond (C)

Manufacturing diamond in the laboratory means that the characteristics of diamond can be changed by changing specific parameters of the production process to adapt to different applications.

Diamond, due to its excellent physical and chemical properties, has been widely studied by researchers with the expectation of being used to produce high-frequency, high-power, and high-temperature electronic devices, including field-effect transistors, diodes, and resistors.

The color centers inside diamond, including nitrogen vacancy centers and silicon vacancy centers, make it have enormous potential in the fields of quantum computing and quantum communication. These defects can be manipulated and controlled by photons and spin states, which have extremely high thermal conductivity, good chemical stability, and excellent optical and spin properties, especially long spin coherence time at room temperature. It can be applied in fields such as quantum information processing, biomarkers, sensitive magnetic field detection, and nanoscale heat transfer control.

Electronic grade diamond has extremely high thermal conductivity and insulation, as well as strong field-effect transistor characteristics such as high electron/hole mobility and high breakdown voltage. It is an ideal material for electronic devices under extreme conditions such as high temperature, high frequency, high power, and radiation environment.

The extremely high thermal conductivity brought by the phonon thermal conductivity of crystals is used as a heat sink material for high-power devices such as LEDs, lasers, and chips.

Diamond is widely used in the biomedical field due to its unique physical and chemical properties such as biocompatibility, chemical stability, mechanical hardness, and optical transparency. For example, as a biosensor, drug delivery carrier, etc.

Dihedral Technology (DHD) provides a variety of high-quality quantum diamonds, electronic grade diamonds, and heat sink diamonds, which can be applied in the research of NV color center basic properties, high spatial resolution quantum precision measurement, planar quantum precision measurement, high sensitivity quantum precision measurement, microwave maser, micro nano processing, high-power devices such as high-power LEDs, high-power chips, and high-power lasers.

Dihedral technology(DHD) provides high-quality diamond crystal materials customized in various specifications


Applications

Quantum Information Processing
Biomarkers
Sensitive magnetic field detection
And nanoscale heat transfer control
Electronic devices in high-temperature, high-frequency, high-power, and radiation environments
Heat dissipation and heat sink materials for high-power devices such as LEDs, lasers, and chips

Features

Excellent optical and spinning characteristics, especially the long -spin -related time at room temperature
High -electronic/floor migration rate
High breakdown voltage
Contains a specific color heart, which can operate and control the photon and self -spin in the quantum level
Great thermal guidance
Good chemical stability

  • Quantum level diamond



    Single NV 

    color center

     Color center array

    2D-NV color center

     ensemble

    High concentration NV 

    color center ensemble

    Parameters                                                           Typical Value

     NV 

    concentration

     1pc/μm2 0.25pcs/μm2 1011-1013pcs/μm2 10-300ppb
     T1 ~5ms ~5ms 1-5ms ~5ms
     T2 ~200μs 100-200μs 10-100μs 50-200μs
     T2* ~0.5-8μs ~0.3-2.2μs ~0.3-0.8μs ~0.7-1μs
    Advantages

    Good coherence

    Controllable concentration

    Depth controllable (5-100 nm)

    Patterned for easy positioning of NV color centers

    Long coherence time, deep NV color center T2>200 us

    Depth controllable (5-100 nm)

    Oxygen termination surface ensures stable shallow NV color centers

    Fixed fluorescence and long coherence time

    High concentration, controllable (10 ppb to 300 ppb);

    Good coherence, T2 ≈ 50 − 200 us

    Application

    Research on the Basic Properties of NV Color Centers

    High spatial resolution quantum precision measurement

    Research on the Basic Properties of NV Color Centers

    High spatial resolution

    Quantum Precision Measurement of Resolution

    Research on the Basic Properties of NV Color Centers

    Planar quantum precision measurement

    High sensitivity quantum precision measurement

    Microwave Maser


    Diamond semiconductor


    Electric-grade Diamond
    H-terminated Diamond
    ParametersValueParametersValue
     Orientation <100>Size5*5mm-20*20mm
     Size0.2*0.2mm-20*20mmThickness0.15-3mm
     Roughness(Ra.) <5nmN content< 100 ppb
     13C 1.10%Carrier mobility≥55 cm2/V·s
     N concentration <5ppbHole concentration≥2×1013cm-2
     B concentration <1ppb

     NV concentration <0.05ppb

    *The default polished surface is<100>, which can be customized according to the required size and thickness.




    Normal diamond single crystal (micro/nano processing...)


    Items

    Parameters

    Size

    5*5mm, 7*7mm, 8*8mm, 10*10mm

    Tolerance

    ±0.05mm

    Thickness

    0.3-4mm

    Thickness tolerance

    ±0.1mm

    Orientation Tolerance

    Side orientation

    <100>/ <110>

    Face orientation

    100)面

    FWHM

    <0.06°

    Roughness

    Ra5nm

    Thermal conductivity

    ≥2000W/(m*K)

    N content

    <100ppb

    Raman peak

    1332±1cm-1

    Raman FWHM

    4cm-1

    Dislocation

    1.3 × 106/cm2

     

    Diamond Heat Sink


    Items

    Unit

    Parameters

    Crystal

    Morphology

    --

    Circular or custom shape

    Ingredients

    --

    Diamond

    Thickness

    μm

    to be customized

    Density

    g/cm3

    3.3216

    Thermodynamic parameters

    Thermal conductivity

    W/(m*K)

    T.C1200;  T.C1500;  T.C1800;T.C2000

    Thermal diffusion coefficient

    cm ^2/s

    6.6;8.2;9.9; 11.0

    Thermal expansion coefficient(RT-700℃)

    10-6 K-1

    3.1962

    Mechanical Properties

    Hardness(moh‘s)

    -

    > 10

    Tensile strength

    Mpa

    450 ~1100

    Young’s modulus

    GPa

    1000 ~1100

    Electrical Property

    Dielectric constant

    1MHz

    5.68

    Dielectric loss

    1MHz

    6.2*10-8

    Volume resistivity

    25℃ ,  'Ω · cm

    2.95*1013

    Dielectric Strength

    Kv/mm

    11

    Optical properties

    Infrared transmittance

    @10.6um( 0.52mm thick ,TC2000)

    >60%

    Infrared absorption coefficient

    @10.6um( cm-1 TC2000)

    <0.1

    Machining

    Fine polishing - surface roughness (front)

    nm( AFM ,5um*5um)

    Ra<2nm

    Grinding - Surface roughness (front/back)

    nm( AFM ,5um*5um)

    Ra<200nm

    Roughness(back)

    nm AFM ,5um*5um

    Ra<50nm(去硅)

    TTV

    μm

    <60um( 2 inch

    Warpage

    μm

    <300um( 2 inch)

    Flatness PV

    fringe@633nm

    <20 fringe  (Ø20mm)

    Metallization&Solder&Punching

    Metallization


    Gold plating; Copper-clad

    Solder


    AuSn

    Punch



    Metallization and graphics can be customized according to needs

    Packaging

    Packagin 1 

    --

    Vacuum packaging

    Packagin 2

    --

    Multi piece packaging