Gallium nitride (GaN)

Gallium nitride (GaN) is a direct bandgap semiconductor material with a bandgap width of approximately 3.4 eV. Therefore, it has high luminous efficiency in both the ultraviolet and visible spectral regions and is widely used in the manufacturing of blue and white light emitting diodes (LEDs) and laser diodes (LDs). In addition, GaN also has good thermal stability, large breakdown electric field and high electron saturation Drift velocity, making it an ideal material for manufacturing high-power and high-frequency electronic devices, such as microwave RF devices and power electronic devices.

GaN crystal structure is stable, generally Hexagonal crystal family, and its physical properties make it have excellent performance in high temperature, high voltage and radiation environment. Despite the complex preparation process and high production cost of GaN crystals, interest in their research has always been high due to their important applications in the fields of optoelectronics and power electronics.

In the future, with the progress of preparation technology, we can expect the application of GaN crystals in fields such as optoelectronics, power electronics, and wireless communication to further expand. Moreover, due to its broadband gap and high-power characteristics, GaN is expected to play a key role in fields such as new energy vehicles, smart grids, and 5G communication.

Dihedral Tech. Co., Ltd. provides high-quality GaN crystal wafers to customers' requirements.

Dihedral Technology(DHD) Co., Ltd. manufacture and processing/provide multiple specifications and high quality GaN crystal,targets,materials.

Applications

• LED lights: Due to its wide control band characteristics, GAN is widely used to make blue and white LED lights. The efficiency and longevity of these LED lights are superior to traditional light-emitting materials.
• RF (RF) applications: Due to its high electron mobility, GAN has been widely used in RF power amplifiers and RF front-end modules such as radar systems, communication equipment, and wireless base stations.
• Power electronics: GAN has many applications in power conversion and power management systems, such as switching power supplies and electric vehicle power systems.
• Solar cells: GAN's wide control band and high radiation immunity make it an ideal material for manufacturing solar cells, especially those for aerospace applications.
• Laser diodes: GAN can be used to make blue and purple laser diodes. These laser diodes are widely used in display, storage, and medical applications.

Features

Nitride (GAN) is a wide -ranging semiconductor material with many unique physical and electronic characteristics, which makes it have a significant advantage in many fields:

• Broad -band: GAN's banned width is about 3.4 EV, which means that it can withstand the strength of the high -electric field without conducting electricity, so it still maintains good performance under high voltage conditions.
• High electronic migration rate: GAN materials have high electron migration rates, which makes them have excellent performance in high -frequency electronic devices.
• High thermal guidance: GAN can effectively emit heat and help cool the cooling of electronic equipment.
• High intensity and hardness: The GAN material itself is very hard and stable, and it is adapted to work in harsh environments.
High radiation resistance: GAN has a strong resistance to radiation and is suitable for use in high -radiation environments.

Items	_{Free-standing GaN wafer}				_{Al2O3 epitaxy with GaN}
Type	_F1010U _F1015U	_F1010N _F1015N	_F1010SI _F1015SI	_F50U _F50-N _F50-SI	_F100U _F100N	_U50S _U100S _N50S _N100S
Size	_{10.0×10.5mm2, 10.0×15mm2, Φ50.8mm, Φ100mm,to be customed}
Thickness	_{300 ± 25 µm, 350 ± 25 µm, 400 ± 25 µm, to be customed}
Orientation	_{C-axis(0001) ± 0.25°}
TTV	_{≤15 µm}
BOW	_{≤20 µm}
Conductivity	_N	N	_{semi-insulate}	_{customed upon request}
Resistivity(300K)	_{<0.5 Ω·cm}	_{<0.05 Ω·cm}	_>106 Ω·cm
Dislocation density	_{from 1 x 105 to 3 x 106 cm-2}
Available surface area	_{> 90%}
Polishing	_{Front: Ra < 0.2nm. substrate grade；Back}: fine grinding

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Gallium nitride (GaN)

Applications

Features

Properties