Silicon carbide (SiC)

Silicon carbide (SiC) is a unique semiconductor material with some excellent physical properties. It has attracted widespread attention due to its single crystal structure, unique performance advantages, wide applications, and broad development prospects.

In terms of structure, silicon carbide single crystals mainly have various crystal polymorphisms, including 3C-SiC, 4H-SiC, 6H-SiC, etc. These different crystal structures have their own unique properties. Among them, 4H SiC and 6H SiC are widely used due to their excellent electronic properties and high thermal conductivity.

The performance advantages of silicon carbide mainly include wide band gap, high Electron mobility, strong thermal stability, good chemical stability and excellent thermal conductivity. Among them, the wide bandgap enables SiC to have high electron penetration ability, which is conducive to operating in harsh environments such as high temperature, high pressure, and high frequency. High Electron mobility and thermal conductivity make SiC have good switching performance and heat dissipation performance.

Silicon carbide has a wide range of applications, including power electronics, optoelectronics, high-temperature electronics, automotive electronics, etc. For example, SiC can be used as the basic material for power devices for power conversion and regulation, greatly improving energy efficiency. In the field of optoelectronics, SiC is used to make solar cells due to its ability to withstand extreme environments. In addition, SiC is also widely used in power conversion systems for electric and hybrid vehicles, bringing significant energy efficiency improvements.

The development prospects of silicon carbide are very broad. With the continuous development of technology, the production cost of SiC is gradually decreasing, making it more widely used in various fields. In emerging fields such as new energy vehicles, wind power, and solar power generation, the application of silicon carbide will also be more widely carried out. Meanwhile, with the higher requirements for efficiency in power electronic equipment, the excellent performance of SiC has enormous potential for its application in these fields. Overall, silicon carbide, as an excellent semiconductor material, will have more extensive and in-depth applications in the future.

Dihedral Tech. Co., Ltd. provides high-quality SiC crystal wafers to customers' requirements.

Dihedral Technology(DHD) Co., Ltd. manufacture and processing/provide multiple specifications and high quality SiC crystal,targets,materials.

Applications

• Power electronic equipment: Due to the high temperature and high voltage characteristics of SiC, it is widely used in power electronic equipment, such as power converters, high-frequency switching power supplies, charging equipment, etc.
• Automotive electronics: SiC has a wide range of applications in power electronic converters, on-board chargers and other devices for electric vehicles, which can improve energy efficiency and reduce volume.
• Photovoltaic equipment: SiC materials are used as inverters in photovoltaic equipment, which can improve the conversion efficiency and stability of the system.
• RF equipment: Due to the high-frequency characteristics of SiC, it is widely used in RF power amplifiers and microwave equipment.
• LED lamp: SiC single crystal can be used as a substrate material for blue LED lamp to improve the efficiency and life of LED lamp.
• Thermoelectric devices: SiC's high thermal conductivity and electrical insulation properties make it have great application potential in thermoelectric equipment.
• Wear-resistant materials: Due to the high hardness of SiC, it is often used as a wear-resistant material, such as sandpaper, abrasives, etc.

Features

• High temperature stability: silicon carbide has a very high melting point (about 2730 ° C). It maintains stability in high temperature environments and is suitable for high temperature applications.
• High -hardness: Silicon carbide is a hard material in the world known that it is second only to diamond and cubic boron nitride, so it has important applications on grinding and cutting tools.
• Dagging: In addition to high hardness, silicon carbide also has good abrasion resistance, making it widely used in various applications that need wear resistance.
• Outstanding thermal conductivity: The thermal conductivity of silicon carbide is very high, which makes it advantageous in electronic equipment and other equipment that requires fast dissipation.
• Chemical resistance: Silicon carbide has better corrosion resistance to most chemical reagents, so that it can still maintain performance in various harsh environments.
• Excellent semiconductor characteristics: Silicon carbide energy gap width is large, suitable for power electronic equipment for high voltage and high temperature environments.
• Low -thermal expansion coefficient: The thermal expansion coefficient of silicon carbide is relatively low, making it changes in size when temperature changes, which is conducive to maintaining the stability of the equipment.
• High -intensity: Silicon carbide is a high -intensity material that can work in various high -pressure environments, which is very suitable for high -pressure equipment and components.

Growth Method	PVT
Crystal Structure	Hexagonal
Lattice constant	a=3.08 Å c=15.08 Å
Stacking order	ABCACB
Band gap	2.93 eV
Hardness	9.2（mohs）
Thermal conductivity@300K	5 W/ cm.k
Dielectric constant	e(11)=e(22)=9.66 e(33)=10.33
Size	10x3，10x5，10x10，15x15，，20x15，20x20，
Size	Dia2”, 15 x 15 mm,10x10mm
Thickness	0.5mm，1.0mm
Polishing	Single or double sided
Orientation	<001>±0.5º
Orientation accuracy:	±0.5°
Edge orientation accuracy:	2°（up to 1 ° for special requirements）
Ra:	≤5Å（5µm×5µm）
Packing	Class 100 clean bag, Class 1000 ultra clean room

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Silicon carbide (SiC)

Applications

Features

Properties