Gallium arsenide (GaAs)

Gallium Arsenide (GaAs) is an important Ⅲ - Ⅴ direct band gap semiconductor material with a band gap width of about 1.43 eV. Compared with silicon, GaAs has a higher Electron mobility, which makes it advantageous in manufacturing high-speed electronic devices, such as RF devices and optoelectronic devices.

GaAs crystals have excellent optical properties and can be used to manufacture optoelectronic devices such as lasers, photodiodes, and solar cells. At the same time, because of their high Electron mobility, GaAs is also widely used to manufacture high-speed electronic devices, such as High-electron-mobility transistor (HEMT) and pseudopotential power FET (PHEMT).

Although the preparation process of GaAs crystals is more complex and costly than silicon, their superior performance in high-speed, high-frequency, optoelectronic, and other fields has made them widely used in many special applications. In the future, with the progress of preparation processes and the reduction of costs, we can expect the application of GaAs crystals in fields such as high-speed communication, optoelectronics, and solar cells to further expand.

Dihedral Tech. Co., Ltd. provides hight quality GaAs crystal wafers to customer's requirements.

Dihedral Technology(DHD) Co., Ltd. manufacture and processing/provide multiple specifications and high quality GaAs crystal,targets,materials.