Indium phosphide (InP)

Indium phosphide (InP) is a III-V semiconductor with zinc alum structure. Its performance advantages mainly come from its excellent electronic and photoelectric properties. Its high Electron mobility makes InP an ideal choice for microwave frequency equipment, and its excellent photoelectric characteristics make it widely used in optoelectronic equipment and optical fiber communication. Meanwhile, the high thermal conductivity and low refractive index of InP also make it exhibit excellent performance in various applications

Indium phosphide has a wide range of applications, from optoelectronic equipment, optical fiber communication, microwave equipment to solar cells, and its unique performance makes it irreplaceable in these fields. With the continuous development of science and technology, the application fields of Indium phosphide will continue to expand, especially in the fields of new energy, communication and semiconductor equipment. The application of Indium phosphide will have great potential.

With the growing demand for high-frequency, high-speed, miniaturization and green energy technologies, the demand for Indium phosphide will also increase. At the same time, because the production process of Indium phosphide is complex and the resources are limited, how to improve the production efficiency and utilization rate of Indium phosphide will become an important topic for scientific research and industry in the future. In general, Indium phosphide, as an excellent semiconductor material, will have a broader development prospect in the future.

Dihedral Tech. Co., Ltd. provides high-quality InP crystal wafers to customers' requirements.

Dihedral Technology(DHD) Co., Ltd. manufacture and processing/provide multiple specifications and high quality InP crystal,targets,materials.

Applications

Optoelectronic devices: such as laser diodes, photodetectors, etc.
Optical fiber communication: as a high-speed photoelectric conversion device in optical fiber communication system.
Microwave equipment: In high-frequency microwave equipment, it can be used as a substrate material for high electron mobility transistors (HEMTs).
Solar cells: used to make efficient multi-junction solar cells.

Features

-The high electronic migration rate: This makes INP suitable for manufacturing high -frequency and high -speed electronic devices.
-Wice for excellent photoelectric characteristics: The direct band gap of INP makes it have an excellent photoelectric effect, which is very suitable for optoelectronics and optical communication applications.
-It large thermal conductivity: Compared to other semiconductor materials, INP has a large thermal conductivity, which is conducive to the heat dissipation of the device.
-The lower refractive index: The refractive index of INP is low, which can reduce the attenuation of optical signals in optical fiber communication.

	Structure	Crystal orientation	Melting point ^oC	Density g/cm³	Band-width
InP	Cubic, a=5.869 A	<100>	1600	4.79	1.344

Main Properties
	Dope	Conductive Type		Carrier concentration (cm^-3)	Mobility(cm²/V.s)	Dislocation Density(cm^-2)	Standard size
InP	Intrinsic	N		(0.4-2)´10¹⁶	(3.5-4)´10³	£5´10⁴	Φ2″×0.35mm Φ3″×0.35mm
InP	S	N		(0.8-3)x10¹⁸ (4-6)x10¹⁸	(2.0-2.4)´10³ (1.3-1.6)´10³	≤ 3x10⁴ ≤ 2x10	Φ2″×0.35mm Φ3″×0.35mm
InP	Zn	P		(0.6-2) x10¹⁸	70-90	≤ 2x10⁴	Φ2″×0.35mm Φ3″×0.35mm
InP	Te	N		107-10⁸	³2000	£3´10⁴	Φ2″×0.35mm Φ3″×0.35mm
尺寸（mm）			Dia50.8x0.35mm,10×10×0.35mm,10×5×0.35mm customized to requirements
Surface roughness(Ra)			<=5Å
Polishing			1 or double sides
Packing			Class 100 clean bag, Class 1000 ultra clean room

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Indium phosphide (InP)

Applications

Features

Properties