Gallium antimonide (GaSb)

Gallium antimonide (GaSb) is a III-V semiconductor material, whose single crystal structure is Sphalerite type. Performance advantages include a wide tunable band and high carrier mobility, making it particularly suitable for manufacturing infrared detectors and thermoelectric power generation equipment. In terms of application, GaSb is widely used in infrared detectors, especially short-wave and medium-wave infrared detectors, as well as basic materials for thermoelectric power generation and lasers for manufacturing mid-infrared regions. Its development prospects mainly lie in the growing demand in areas such as infrared detection and energy utilization, as well as it's potential in the field of new infrared lasers and other optoelectronic devices.

Dihedral Tech. Co., Ltd. provides high-quality GaSb crystal wafers to customers' requirements.

Dihedral Technology(DHD) Co., Ltd. manufacture and processing/provide multiple specifications and high quality GaSb crystal,targets,materials.

Applications

Infrared detector: suitable for shortwave and medium-wave infrared detectors.
Thermophotovoltaic cells: as the basic material for thermoelectric power generation.
Lasers: Used to manufacture lasers in the mid-infrared region.

Features

-Wide tunable band: giving GaSb an advantage in infrared detection and laser manufacturing.
-High carrier mobility: beneficial for the manufacturing of high-speed equipment.
-The crystal is grown using liquid sealed Czochralski (LEC) technology, which is mature and has stable electrical properties
-Using an X-ray orientation device for precise orientation, the chip is subjected to chemical mechanical polishing (CMP) to meet the requirements of "ready to use" upon opening the box.
-Special specification product processing can be carried out according to user requirements.

Single Crystal	Doping	Conductivity Type		Carrier Concentration cm^-3	Mobility (cm²/V.s)	Dislocation Density (cm^-2)	Standard Substrate
GaSb	Intrinsic	P		(1-2)´10¹⁷	600-700	£1´10⁴	Φ2″×0.5mm Φ3″×0.5mm
GaSb	Zn	P		(5-100) ´10¹⁷	200-500	£1´10⁴	Φ2″×0.5mm Φ3″×0.5mm
GaSb	Te	N		(1-20)´10¹⁷	2000-3500	£1´10⁴	Φ2″×0.5mm Φ3″×0.5mm
Dimension			Dia50.8x0.5mm,10×10×0.5mm、10×5×0.5mm According to customer needs, substrates with special orientation and size can be customized.
Surface Roughness			Surface roughness(Ra):<=5 Å Atomic Particle Microscopy (AFM) test report can be provided.
Polishing			One side or two sides
Package			Class 100 clean bag, Class 1000 super clean room

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Gallium antimonide (GaSb)

Applications

Features

Properties