Cadmium zinc telluride (CdZnTe)

Cadmium Zinc Telluride CdZnTe(CZT) is considered the most promising room-temperature radiation detection material. Compared with flash detectors, it has higher energy and spatial resolution and can tolerate more radiation doses (1mcps/mm ²）， And it's not easy to solve. Working at room temperature has good portability, and the detection efficiency per unit volume is higher than that of high purity. Compared with SI detectors, it has a wider detection energy range and much higher efficiency than SI detectors. Given the above advantages, zinc cadmium detectors have broad application prospects in nuclear safety instruments, security inspection equipment, medical imaging equipment, nuclear industry testing equipment, and astronomical detection equipment. Since 2007, the performance potential of the CdZnTe detector has been developed, and its superiority has received widespread attention. It is considered a key focus for future development and has entered a rapid development stage.

Dihedral Tech. Co., Ltd. provides high-quality CdZnTe (CZT) crystal wafers to customers' requirements.

Dihedral Technology(DHD) Co., Ltd. manufacture and processing/provide multiple specifications and high quality CdZnTe crystal,targets,materials.

Applications

The characteristics of tellurium zinc cadmium detectors in gamma rays, X-ray imaging, X-ray diffraction, nuclear medical imaging, etc. make them widely used in nuclear safety instruments, security inspection equipment, medical imaging equipment, nuclear industry testing equipment, and astronomical detection equipment.

Features

▪ Compared to scintillator detectors, It can tolerate higher radiation doses (>1Mcps/mm2), has greater energy and spatial resolution than scintillator detectors, and is not readily deliquescent;
▪ Compared to high-purity germanium detectors, It is more portable and can operate at room temperature than high-purity germanium detectors. The detection efficiency per unit volume is higher than that of high-purity germanium;
▪ Compared to Si detectors, it has advantages such as a wider detection energy range and much higher efficiency than Si detectors;
▪ Excellent electrical performance, high absorption coefficient, and moderate thermal expansion;
▪ Used for epitaxial growth of HgCdTe (MCT);
▪ Can effectively convert radiation into electrons.

CdZnTe substrate

Features:

-High flatness;

-High lattice matching degree;

-Low dislocation density;

-High infrared transmittance.

Application:

-National defense;

-Security;

-Positioning;

-Guidance.

Performance and parameters:

Material	Cdo.96Zno.04Te
Conductive	p
Size	10×10×1mm3，14×14×1.3mm3，25×25×1.3mm³（to be customized）
Orientation	<111>、<211>
Crystal orientation variation	≤0.3°
Resistivity	>10°Q·cm
Transmittance	≥60%（1.5μm～25μm）
Dia. of inclusion	≤10μm
FWHM	≤30 rad·s
Etch pit density	5x104/cm2(111),1x104/cm2(211)
Storage (transportation) Temperature	10℃~40℃
Storage (transportation) humidity	20%~80%

CdTe substrate

Properties：

-High flatness;

-High lattice matching.

Application:

-Epitaxial substrate;

-Evaporation source crystal chip;

Properties：

Material	CdTe
Conductive	p
Size	5.0×5.0×1.0mm³，10.0×5.0×1.0mm³，10.0×10.0×1.（to be customized）
Orientation	<111>、<110>、<100>etc.
Crystal orientation variation	≤0.3°
Resistivity	>10°Q·cm
Storage (transportation) Temperature	10℃~40℃
Storage (transportation) humidity	20%~80%

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