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- Semiconductor crystal
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Single crystal substrate
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Multifunctional single crystal substrate
- Barium titanate (BaTiO3)
- Strontium titanate (SrTiO3)
- Iron doped strontium titanate (Fe:SrTiO3)
- Neodymium doped strontium titanate (Nd:SrTiO3)
- Aluminium oxide (Al2O3)
- Potassium tantalum oxide (KTaO3)
- Lead magnesium niobate–lead titanate (PMN-PT)
- Magnesium oxide (MgO)
- Magnesium aluminate spinel (MgAl2O4)
- Lithium aluminate (LiAlO2)
- Lanthanu m aluminate (LaAlO3)
- Lanthanu m strontium aluminate (LaSrAlO4)
- (La,Sr)(Al,Ta)O3
- Neodymium gallate (NdGaO3)
- Terbium gallium garnet (TGG)
- Gadolinium gallium garnet (GGG)
- Sodium chloride (NaCl)
- Potassium bromide (KBr)
- Potassium chloride (KCl)
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Multifunctional single crystal substrate
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Functional crystal
- Optical window
- Scintillation crystal
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Laser crystal
- Rare earth doped lithium yttrium fluoride (RE:LiYF4)
- Rare earth doped lithium lutetium fluoride (RE:LiLuF4)
- Ytterbium doped yttrium aluminium garnet (Yb:YAG)
- Neodymium doped yttrium aluminium garnet (Nd:YAG)
- Erbium doped yttrium aluminium garnet (Er:YAG)
- Holmium doped yttrium aluminium garnet (Ho:YAG)
- Nd,Yb,Er,Tm,Ho,Cr,Lu Infrared laser crystal
- N* crystal
- Metal single crystal
- Material testing analysis
- Material processing
- Scientific research equipment
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Epitaxial Wafer/Films
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Inorganic epitaxial wafer/film
- Gallium Oxide epitaxial wafer (Ga2O3)
- Platinum/Titanium/Silicon Dioxide/Silicon epitacial wafer (Pt/Ti/SiO2/Si)
- Lithium niobate thin film epitaxial wafer
- Lithium tantalate thin film epitaxial wafer
- InGaAs epitaxial wafer
- Gallium Nitride(GaN) epitaxial wafer
- Yttrium Iron Garnet(YIG) epitaxial wafers
- Fullerenes&Fullerols
- Epitaxial silicon wafer
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Inorganic epitaxial wafer/film
- Conductive Glass
- Fine Ceramics
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2-D material
- 2-D crystal
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Layered transition metal compound
- Iron chloride (FeCl2)
- Niobium sulfide (NbS3)
- Gallium telluride iodide (GaTeI)
- Indium selenide (InSe)
- Copper indium phosphide sulfide (CuInP2S6)
- Tungsten sulfide selenide (WSSe)
- Iron germanium telluride (Fe3GeTe2)
- Nickel iodide (NiI2)
- Iron phosphorus sulfide (FePS3)
- Manganese phosphorus selenide (MnPSe3)
- Manganese phosphorus sulfide (MnPS3)
- Interface thermal conductive materials
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Epitaxial Wafer/Films
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High-purity element
- Non-metallic
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Metal
- Scandium (Sc)
- Titanium (Ti)
- Indium (In)
- Gallium (Ga)
- Bismuth (Bi)
- Tin (Sn)
- Zinc (Zn)
- Cadmium (Cd)
- Antimony (Sb)
- Copper (Cu)
- Nickel (Ni)
- Molybdenum (Mo)
- Aluminium (Al)
- Rhenium (Re)
- Hafnium (Hf)
- Vanadium (V)
- Chromium (Cr)
- Iron (Fe)
- Cobalt (Co)
- Zirconium (Zr)
- Niobium (Nb)
- Tungsten (W)
- Germanium (Ge)
- Iron(Fe)
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Compound raw materials
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Oxide
- Tungsten Trioxide (WO3)
- Hafnium Dioxide (HfO2)
- Ytterbium Oxide (Yb2O3)
- Erbium Oxide (Er2O3)
- Lanthanu m Oxide (La2O3)
- Cerium Dioxide (CeO2)
- Tin Dioxide (SnO2)
- Niobium Oxide (Nb2O3)
- Zirconium Dioxide (ZrO2)
- Zinc Oxide (ZnO)
- Copper Oxide (CuO)
- Magnetite (Fe3O4)
- Titanium Dioxide (TiO2)
- Samarium (III) oxide (Sm2O3)
- Silicon Dioxide (SiO2)
- Aluminum Oxide (Al2O3)
- Gallium Oxide Ga2O3(Powder)
- Sulfide
- Fluoride
- Nitride
- Carbide
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Halide
- Gallium Chloride (GaCl3)
- Indium Chloride (InCl3)
- Aluminum Chloride (AlCl3)
- Bismuth Chloride (BiCl3)
- Cadmium Chloride (CdCl2)
- Chromium Chloride (CrCl2)
- Chromium Chloride Hydrate (CrCl2(H2O)n)
- Copper Chloride (CuCl)
- Copper Chloride II (CuCl2)
- Cesium Chloride (CsCl)
- Europium Chloride (EuCl3)
- Europium Chloride Hydrate (EuCl3.xH2O)
- Magnesium Chloride (MgCl2)
- Sodium Chloride (NaCl)
- Nickel Chloride (NiCl2)
- Indium Chloride (InCl3)
- Indium Nitrate Hydrate (In(NO3).xH2O)
- Rubidium Chloride (RbCl3)
- Antimony Chloride (SbCl3)
- Samarium Chloride (SmCl3)
- Samarium Chloride Hydrate (SmCl3.xH2O)
- Scandium Chloride (ScCl3)
- Tellurium Chloride (TeCl3)
- Tantalum Chloride (TaCl5)
- Tungsten Chloride (WCl6)
- Aluminum Bromide (AlBr3)
- Barium Bromide (BaBr2)
- Cobalt Bromide (CoBr2)
- Cadmium Bromide (CdBr2)
- Gallium Bromide (GaBr3)
- Gallium Bromide Hydrate (GaBr3.xH2O)
- Nickel Bromide (NiBr2)
- Potassium Bromide (KBr)
- Lead Bromide (PbBr2)
- Zirconium Bromide (ZrBr2)
- Bismuth Bromide (BiBr4)
- Bismuth Iodide (BiI3)
- Calcium Iodide (CaI2)
- Gadolinium Iodide (GdI2)
- Cobalt Iodide (CoI2)
- Cesium Iodide (CsI)
- Europium Iodide (EuI2)
- Lithium Iodide (LiI)
- Lithium Iodide Hydrate (LiI.xH2O)
- Gallium Iodide (GaI3)
- Gadolinium Iodide (GdI3)
- Indium Iodide (InI3)
- Potassium Iodide (KI)
- Lanthanu m Iodide (LaI3)
- Lutetium Iodide (LuI3)
- Magnesium Iodide (MgI2)
- Sodium Iodide (NaI)
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Oxide
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High-purity element
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Sputtering Target
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Metal target material
- Gold (Au(T))
- Silver (Ag(T))
- Platinum (Pt(T))
- Palladium (Pd(T))
- Ruthenium (Ru(T))
- Iridium (Ir(T))
- Aluminium (Al(T))
- Copper (Cu(T))
- Titanium (Ti(T))
- Nickel (Ni(T))
- Chromium (Cr(T))
- Cobalt (Co(T))
- Iron (Fe(T))
- Manganese (Mn(T))
- Zinc (Zn(T))
- Vanadium (V(T))
- Tungsten (W(T))
- Hafnium (Hf(T))
- Niobium (Nb(T))
- Molybdenum (Mo(T))
- Lanthanu m (La (T))
- Cerium (Ce (T))
- Praseodymium (Pr (T))
- Neodymium (Nd (T))
- Samarium (Sm (T))
- Europium (Eu (T))
- Gadolinium (Gd (T))
- Terbium (Tb (T))
- Dysprosium (Dy (T))
- Holmium (Ho (T))
- Erbium (Er (T))
- Thulium (Tm (T))
- Ytterbium (Yb (T))
- Lutetium (Lu (T))
- Alloy target material
- Semiconductor target material
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Oxide target material
- Aluminum Oxide (Al2O3(T))
- Silicon Dioxide (SiO2(T))
- Titanium Dioxide (TiO2(T))
- Chromium Oxide (Cr2O3(T))
- Nickel Oxide (NiO(T))
- Copper Oxide (CuO(T))
- Zinc Oxide (ZnO(T))
- Zirconium Oxide (ZrO2(T))
- Indium Tin Oxide (ITO(T))
- Indium Zinc Oxide (IZO(T))
- Aluminum Doped Zinc Oxide (AZO(T))
- Cerium Oxide (CeO2(T))
- Tungsten Trioxide (WO3(T))
- Hafnium Oxide (HfO2(T))
- Indium Gallium Zinc Oxide (IGZO(T))
- Nitride target material
- Sulfide target material
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Antimony tellurium selenium boron target material
- Magnesium Boride (MgB2(T))
- Lanthanu m Hexaboride (LaB6(T))
- Titanium Diboride (TiB2(T))
- Zinc Selenide (ZnSe(T))
- Zinc Antimonide (Zn4Sb3(T))
- Cadmium Selenide (CdSe(T))
- Indium Telluride (In2Te3(T))
- Tin Selenide (SnSe(T))
- Germanium Antimonide (GeSb(T))
- Antimony Selenide (Sb2Se3(T))
- Antimony Telluride (Sb2Te3(T))
- Bismuth Telluride (Bi2Te3(T))
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Metal target material
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Sputtering Target
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- About
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- Single crystal substrate
- Multifunctional single crystal substrate
- Strontium titanate (SrTiO3)
Strontium titanate (SrTiO3)
SrTiO3 is an insulating material that can be transformed into ferroelectric materials or superconductors through chemical doping, pressure, strain, or isotope substitution.single-crystal
It is one of the most widely used excellent High-temperature superconductivity single crystal substrates. It has good lattice matching with High-temperature superconductivity materials such as YBa2Cu3O7, no twin structure, and excellent physical and mechanical properties. TCO 90 ° K, JCO 106A/cm2 can be obtained from various High-temperaturesingle-crystal superconductivity films (Y line, double line, La line, etc.) prepared by various film preparation technologies (such as magnetron sputtering, Pulsed laser deposition, laser Molecular-beam epitaxy, etc.). SrTiO3 is also the preferred single crystal material for High-temperature superconductivity junction technology (using double crystal substrate or step substrate) and substrate step (oblique cutting at a specific angle).
SrTiO3 is an insulating material that can be transformed into ferroelectric materials or superconductors through chemical doping, pressure, strain, or isotope substitution.
Strontium titanate is one of the important perovskite solar cell materials, and perovskite is a kind of material with good photoelectric properties. Therefore, the growth of perovskite on Strontium titanate is a hot research topic in recent years.
Dihedral Technology(DHD) Co., Ltd. manufacture and processing/provide multiple specifications and high quality SrTiO3 crystal,targets,materials.
Applications
Various high-temperature superconducting films (Y-line, bilinear, La-line, etc.) prepared by using SrTiO3 as substrate and using various film-making techniques (e.g. magnetron sputtering, pulsed laser deposition, laser molecular beam epitaxy, etc.) can obtain TCO 90°K, JCO 106A/cm2.
SrTiO3 is also the preferred single-crystal material for high-temperature superconducting junction technology (using bicrystalline substrates or stepped substrates) and substrate stepping (bevel-cut at a specific angle).
Features
SrTiO3 is an insulating material that can be transformed into ferroelectric materials or superconductors through chemical doping, pressure, strain, or isotope substitution.
Strontium titanate (SrTiO3) is one of the most widely used High-temperature superconductivity single crystal substrates.
It has good lattice matching with High-temperature superconductivity materials such as YBa2Cu3O7, no twin structure, and excellent physical and mechanical properties. “
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Crystal Structure
Cubic
Growth Method
Verneuil's method, floating zone method
Lattice Constant
a=3.905Å
Melting Point
2060℃
Density
5.122(g/cm3)
Mohs Hardness
6-6.5 (mohs)
Thermal Expansion
9.4×10-6/K
Dielectric Constant
ε=5.20
Chemical Stability
Insoluble in water
Loss Tangent
~5×10-4(300k) ~3×10-4(77k)
Color
Transparent (sometimes slightly yellow according to the annealing state)
Dimension
5x5mm、10×5mm、10×10mm、20×20mm,Dia25.4mm,Dia30mm,
According to customer needs, substrates with special orientation and size can be customized.
Thickness
0.5mm、1.0mm
Dimension Tolerance
<±0.1mm
Thickness Tolerance
<±0.05mm
Polishing
One side or two sides
Orientation
<100>、<110>、<111>
Orientation Tolerance
±0.5°
Edge Orientation Accuracy
2°(Special requirements can reach within 1 °)
Package
Class 100 clean bag, Class 1000 super clean room