Lanthanu m aluminate (LaAlO3)

Lanthanu m aluminate is an important crystal material with good dielectric property, high dielectric constant and high thermal stability. Therefore, Lanthanu m aluminate has broad application prospects in electronics, optics, energy and other fields.
For example, in the field of electronics, Lanthanu m aluminate can be used as a thin film dielectric layer to manufacture ceramic microwave dielectric devices with high dielectric constant; In the field of optics, Lanthanu m aluminate can be used as a highly transparent UV light barrier film, which is widely used in optoelectronic devices such as lasers and photo Photophore; In the energy field, Lanthanu m aluinate can be used as the cathode material of fuel cells to improve the emf efficiency of fuel cells.
Therefore, Lanthanu m aluminate has broad application prospects and will be widely used in the future.

Dihedral Technology(DHD) Co., Ltd. manufacture and processing/provide multiple specifications and high quality LaAlO3 crystal,targets,materials.

Applications

Produce high-temperature superconducting microwave electronic devices (such as Tongxin high-temperature superconducting microwave filters).

Features

• Lanthanu m aluminate (LaAlO3) is a photoelectric material with excellent performance, which is usually used as a substrate material.
• The lattice parameters of Lanthanu m aluminate crystal are close to some important semiconductor materials (such as GaN), which makes it an ideal substrate for growing these materials.
• Lanthanu m aluminate crystal has high melting point and hardness, shows good thermal stability, and is suitable for high temperature growth and processing conditions.
This crystal has excellent optical transparency, especially in the ultraviolet region, and can be used to prepare ultraviolet optoelectronic devices.
• The dielectric constant of Lanthanu m aluminate crystal is moderate, which makes it have application potential in microelectronics and RF equipment.
• Good match with High-temperature superconductivity materials and lattice (such as YBaCuO).
It has low dielectric constant and low microwave loss.

Crystal Structure	M6（normal temperature）	M3（>435℃）
Lattice Constant	M6 a=5.357A c=13.22 A	M3 a=3.821 A
Melting Point	2080℃
Density	6.52（g/cm³）
Mohs Hardness	6-6.5（mohs）
Thermal Expansion	9.4x10^-6/K
Dielectric Constants	ε=21
Secant Loss（10GHz)	～3×10^-4@300k,～0.6×10^-4@77k
Color and Appearance	To anneal and conditions differ from brown to brownish The polished substrate has natural twin domains.
Chemical Stability	Room temperature is not dissoluble in minerals, the temperature is greater than 150 ℃ in soluble h3po4
Characteristics	For microwave electron device
Growth Method	Czochralski
Dimension	10x3mm，10x5mm，10x10mm，15x15mm，20x15mm，20x20mm
	Ф15,Ф20，Ф1″，Ф2″,Ф2.6″
Thickness	0.5mm，1.0mm
Polishing	One side or two sides
Orientation	＜100＞＜110＞＜111＞
Crystal Plane Orientation Accuracy	±0.5°
Edge Orientation Accuracy	2°（Special requirements can reach within 1°）
Bevel Wafer	According to specific requirements, wafers with edge-oriented crystal planes inclined at a specific angle (inclination angle 1°-45°) can be processed.
Surface Roughness	Ra≤5Å（5×5µm）
Package	Class 100 clean bag, Class 1000 super clean room

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Lanthanu m aluminate (LaAlO3)

Applications

Features

Properties