Neodymium gallate (NdGaO3)

Neodymium Galliate(NdGaO3 ) is mainly used as a substrate for the growth of high-temperature superconductors (such as YBCO) and epitaxial films of magnetic materials. Due to the very small lattice mismatch (~0.27%) between NdGaO3 and YBCO and the absence of structural phase transition, high-quality thin films can be epitaxial grown on NdGaO3 substrates.

Dihedral Technology(DHD) Co., Ltd. manufacture and processing/provide multiple specifications and high quality NdGaO3 crystal,targets,materials.

Applications

Mainly used as a substrate for the growth of high-temperature superconductors (such as YBCO) and magnetic material epitaxial thin films.

Features

The lattice mismatch between Neodymium Galliate NdGaO3 and YBCO is very small (~0.27%), and there is no structural phase transition. High quality thin films can be epitaxial grown on NdGaO3 substrates.
Gallium neodymium is an excellent dielectric material with high dielectric constant and low loss.
NdGaO3 has excellent thermal stability and can maintain good performance under high temperature conditions.
NdGaO3 is an excellent substrate material, especially suitable for growing films with complex structures, such as perovskite structures.
• NdGaO3 has high crystal quality, complete crystal structure and no obvious Crystallographic defect, which makes it have excellent performance in electronic and optical applications.
NdGaO3 has a wide band gap, which gives it good optical transparency in the ultraviolet region.

  • Crystal Structure

    Orthogonal

    Lattice Constant

    a=5.43 Å, b=5.50 Å, c=7.71 Å

    Melting point

    1600℃

    Density

    7.57 (g/cm3)

    Dielectric Constants

    25

    Growth Method

    Czochralski

    Dimension

    10x3mm10x5mm10x10mm15x15mm20x15mm20x20mm

    Thickness

    0.5mm1.0mm

    Polishing

    One side or two sides

    Orientation

    <100  110  111

    Crystal Plane Orientation Accuracy

    ±0.5°

    Edge Orientation Accuracy

    Special requirements can reach within 1°

    Bevel Wafer

    According to specific requirements, wafers with edge-oriented crystal planes inclined at a specific angle (inclination angle 1°-45°) can be processed.

    Surface Roughness

    Ra≤5Å5×5µm

    Package

    Class 100 clean bag, Class 1000 super clean room