Germanium Antimonide (GeSb(T))

Germanium antimony (GeSb) sputtering targets are instrumental in producing thin films with exceptional phase-change properties. Their reversible and rapid phase transitions between amorphous and crystalline states make them ideal for applications in phase-change memory devices and data storage. GeSb thin films enable reliable and high-speed data storage with the ability to switch between different memory states. With the ever-increasing demand for data storage and memory technologies, GeSb sputtering targets play a significant role in advancing these fields.

Dihedral Technology(DHD) Co., Ltd. manufacture and processing/provide multiple specifications and high quality GeSb(T) crystal,targets,materials.