Platinum/Titanium/Silicon Dioxide/Silicon epitacial wafer (Pt/Ti/SiO2/Si)

• Microelectronic devices and integrated circuits.
• Thermal management and thermoelectric applications.
• Optoelectronics and optical communications

• Structure: The structure of this material consists of four layers. The bottom layer is monocrystalline silicon (Si), covered with a layer of silicon dioxide (SiO2), then a layer of titanium (Ti), and the top layer is a layer of platinum (Pt). Each layer of material has its own unique physical and chemical properties, and their combination gives the material some special properties.
• Electrical properties: Pt/Ti/SiO2/Si single wafers have excellent conductivity and dielectric properties, making them widely used in microelectronic devices and integrated circuits.
• Thermal properties: This material has good thermal stability and thermal conductivity, making it important in thermal management and thermoelectric applications.
• Corrosion resistance: The surface layer of this material is platinum, which has excellent resistance to oxidation and corrosion, which allows it to maintain good performance under various environmental conditions.
• Optical properties: The silica layer has excellent optical transparency, which makes the material potentially valuable in optoelectronic and optical communication applications.