Aluminum Nitride ceramic (AlN(ceramic))

Aluminum nitride is an advanced ceramic material with excellent mechanical strength and thermal conductivity. The coefficient of thermal expansion of this material is similar to that of silicon and gallium arsenic, making it an ideal substrate for electronic packaging and electronic devices.

Dihedral Technology(DHD) Co., Ltd. manufacture and processing/provide multiple specifications and high quality AlN(ceramic) crystal,targets,materials.

Applications

Aluminum nitride is widely used in high-frequency electronic devices, power electronics, optoelectronics and microelectronics and other fields. Such as high-frequency radio frequency (RF) and microwave devices, power amplifiers, LEDs and laser diodes. Due to its excellent thermal conductivity, aluminum nitride is also often used as a heat sink for electronic devices.

Features

• High thermal conductivity: Aluminum nitride has better thermal conductivity than most materials, which makes it excellent in thermal applications.
• Low thermal expansion coefficient: The thermal expansion coefficient of aluminum nitride is similar to that of silicon, gallium arsenic and other materials, which is conducive to material matching and packaging.
• High strength and hardness: Aluminum nitride has higher mechanical strength and hardness than many other ceramic materials.
• Excellent electrical properties: Aluminum nitride has good insulating and dielectric properties, which is very important for electronic applications.
• Corrosion resistance and stability: Aluminum nitride has excellent chemical stability and corrosion resistance, allowing it to maintain its performance in harsh environments.
• Good optical transparency: Aluminum nitride has high transparency in the ultraviolet to visible region, which makes it an important application in optoelectronic equipment.

  • Item No.

    Density(g/cm3)

    Thermal Conductivity(W/m.K)

    Thermal Expansion(x10-6/℃

    Dielectric Strength(Kv/mm)

    Dielectric Constant(at 1MHz)

    Loss Tangent(x104@1 MHz)

    Volume Resistivity(ohm—cm)

    Flexural Strength(Kg/mm2)

    SD5111

    >3.20

    80~100

    <4.5

    >15

    9.0

    3~10

    >1013

    >20

    SD5113

    >3.25

    100~130

    <4.3

    >15

    8.7

    3~7

    >1014

    >25

    SD5115

    >3.25

    140~170

    <4.3

    >15

    8.7

    3~7

    >1014

    >28

    SD5116

    3.26

    >170

    <4.2

    >15

    8.7

    3~7

    >1014

    >30