Aluminum Nitride (AlN) crystal/substrate/film

1. High temperature power electronic devices, such as high temperature power amplifiers, switches, and rectifiers.
2. Create UV LEDs. These LEDs have extensive applications in fields such as pollution detection and biosensing.
3. Applications such as wireless communication, sensing, and filters.
4. RF power amplifier, RF switch, and RF filter.
5. Cooling solutions for efficient heat sinks, thermal sensors, and high-power electronic devices.
6. Electronic and photonic integrated devices, such as optoelectronic integrated chips and sensors.
7. Ultrasonic sensors, used in fields such as measurement, detection, and imaging.

1. Aluminum nitride has a large bandgap energy gap, typically between 6 and 6.2 electron volts (eV), which makes it excellent in applications of ultraviolet and deep ultraviolet light.
2. Aluminum nitride has excellent thermal conductivity, usually between 150 and 320 thermal conductivity (W/m · K), which makes it play an important role in high-power electronic devices and thermal management. It can effectively dissipate heat, reduce device temperature, and improve device stability and performance.
3. The high electron mobility of aluminum nitride makes it an ideal material for high-frequency electronic devices. This is particularly important in RF applications, such as RF power amplifiers and RF switches.
4. Good surface acoustic wave performance.
5. Aluminum nitride has good chemical stability, making it suitable for various environments and applications.
6. Due to its wide bandgap, aluminum nitride has potential applications in optical sensors, optical communication, and optical devices.