InGaAs epitaxial wafer

Produce high-performance and high-quality compound semiconductor materials based on gallium arsenide (GaAs), indium phosphide (InP), and indium antimonide (GaSb) substrates.

Applications

Applied to photodetectors, avalanche diodes, heterojunction bipolar transistors, quantum cascade lasers, high electron mobility transistors, etc.

Features

High quality;
Customization.

Customized according to the required size and film performance parameters.

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InGaAs epitaxial wafer

Applications

Features

Properties