Gallium Nitride(GaN) epitaxial wafer

GaN epitaxial wafers are a key semiconductor material commonly used for manufacturing high-frequency, high-power, and high-temperature electronic devices, such as high electron mobility transistors (HEMTs) and optoelectronic devices. Gallium nitride has many excellent properties, including high electron mobility, high breakdown electric field strength, excellent thermal stability, and low impurity concentration.

The production of gallium nitride epitaxial wafers usually uses metal organic vapor deposition (MOCVD) technology. During this process, a thin film of gallium nitride is deposited on the substrate, forming a multi-layer structure.

The thickness of gallium nitride epitaxial wafers can be customized according to specific application requirements, usually between a few micrometers to tens of micrometers.

Commonly used substrate materials include sapphire and silicon.

Applications

RF and microwave devices: Gallium nitride epitaxial wafers are widely used in high-frequency devices such as RF power amplifiers and microwave power amplifiers, especially in communication and radar systems.
Optoelectronic devices: Gallium nitride epitaxial wafers can also be used to manufacture optoelectronic devices such as LEDs, lasers, photodetectors, etc.
Power electronic devices: Gallium nitride epitaxial wafers can also be used to manufacture power switching devices, such as high voltage and high current power switching devices.

Features

Broadband gap semiconductor: Gallium nitride has a large bandgap energy gap, making it excellent in high-power and high-frequency electronic devices.
High electron mobility: Gallium nitride has a much higher electron mobility than many other semiconductor materials, making it particularly useful in high-frequency applications.
High thermal stability: Gallium nitride can work in high-temperature environments, which makes it excellent in high-power devices.

Examples.

Silicon based gallium nitride GaN epitaxial wafers

Structure	Thickness	Remarks
Cap-GaN	3nm
Barrier AlGaN	20-30nm	Al%:20-27%
AIN	1nm
UGaN	200nm
CGaN	1500nm
Buffer AlGaN	3200nm	Al%:10-70%
Buffer AIN	250nm
Substrate Si(Notch、Flat)	1000μm	150 mm Si(111)
Item	Specifications
外延层厚度Epi thickness	5.2±0.5	μm
边缘裂纹Edge crack	<3	mm
弯曲度Bow	<±30	μm
(002)面半峰宽GaN XRD FWHM(002)	<700	arcsec
(102)面半峰宽GaN XRD FWHM(102	<800	arcsec
二维电子气迁移率2DEG mobility	>1800	cm²/V · s
二维电子气浓度2DEG concentration	>8E12	cm-2
方块电阻Sheet resistance	<400	Ω

Sapphire based epitaxial wafer

EPITAXY STRUCTURE		THICKNESS (nm)	Al COMPOSITION (%
4	GaN	2.0±0.5	■
3	AlGaN	22±1	24.5±0.5
2	GaN	300±50	■
1	Buffer	SYTtech Proprietary Buffer Layer
0	Substrate	Diameter:100-mm
EPITAXIAL LAYERS PROPERTIES		VALUE/RANGE
GaN Crystallinity -GaN(002) -GaN(102 Surface roughness GaN Thickness Uniformity		<150 arcsec <350 arcsec <0.5nm(5umx5um <3%
Sheet Resistance Tageted average Uniformity(STD		400±10(0hm/sq <3%
SUBSTRATE:Al₂O₃		SPECIFICATIONS
Diameter (mm)		100.0±0.1
Thickness (um		650±25
Orientation		C-Plane,0.2±0.1°to M-plane
Surface		Single-sided polished

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Gallium Nitride(GaN) epitaxial wafer

Applications

Features

Properties