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Gallium Selenide GaSe

GaSe is an important material in the fields of optoelectronics and nonlinear optics. It is a layered semiconductor material with a hexagonal crystal structure, where Ga and Se atoms are alternately arranged in each layer, and weak van der Waals forces bind the layers together. This structure makes GaSe easy to peel off into thin sheets.

The main applications of GaSe

1. Nonlinear optical materials: used for nonlinear optical applications such as frequency conversion and second harmonic generation (SHG).

2. Optoelectronic devices: Applied in photodetectors, light modulators, and other devices, due to their wide bandgap characteristics, they can be used to detect ultraviolet to infrared light.

3. Two dimensional materials: As the research object of two-dimensional materials, they have potential applications in electronics, photonics, and thermoelectronics..


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Applications

1. Nonlinear optical materials: used for nonlinear optical applications such as frequency conversion and second harmonic generation (SHG).
2. Optoelectronic devices: Applied in photodetectors, light modulators, and other devices, due to their wide bandgap characteristics, they can be used to detect ultraviolet to infrared light.
3. Two dimensional materials: As the research object of two-dimensional materials, they have potential applications in electronics, photonics, and thermoelectronics.

Features

Compared to similar materials, GaSe (gallium selenide) has the following advantages:

1. High nonlinear optical coefficient: making it perform well in nonlinear optical applications such as frequency conversion and second harmonic generation (SHG).

2. Wide bandgap semiconductor: With a bandgap of approximately 2.0 eV, it is suitable for use in ultraviolet to infrared photodetectors and can detect a wide spectral range.

3. Layered structure: It is easy to peel off into ultra-thin two-dimensional materials, which has unique advantages in the fields of optoelectronics and nanotechnology, and helps to develop new two-dimensional electronic and optoelectronic devices.

    • Optical performance: GaSe has a wide bandgap and high nonlinear optical coefficient, making it suitable for use in nonlinear optical devices.

    • Electrical properties: It is a direct bandgap semiconductor with a bandgap of approximately 2.0 eV and excellent photoelectric response characteristics.

    • Mechanical properties: The layered structure makes it easy to mechanically peel off and process into ultra-thin nanosheets.


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