ε - Gallium Oxide (Ga2O3)

ε - Ga ₂ O3 (ε - phase gallium oxide) is an ultra wide bandgap semiconductor material, which has shown important application prospects in high-frequency power electronic devices and ultraviolet detection due to its unique polarization characteristics and wide bandgap.

Structural characteristics

Crystal structure: ε - Ga ₂ O3 belongs to the orthorhombic crystal system and is a metastable phase of gallium oxide. Compared with the stable β phase, the ε phase has special polarization characteristics, which makes it more promising in specific electronic device applications.
Polarization characteristics: The polarization characteristics of ε - Ga ₂ O ∝ enable it to generate significant spontaneous polarization effects under an external electric field, which significantly improves the performance of high-frequency power devices.

Sapphire based ε - Ga ₂ O ∝ epitaxial wafers

Epitaxial growth technology: Sapphire (Al ₂ O3) substrate is widely used for heterogeneous epitaxial growth of ε - Ga ₂ O3. The lattice mismatch between sapphire and ε - Ga ₂ O3 is small, which is conducive to achieving high-quality epitaxial growth and forming thin films with good polarization characteristics and conductivity.
Advantages of sapphire substrate: Sapphire has excellent thermal stability and mechanical strength, as well as low cost and good transparency, making it suitable for use in different optoelectronic devices. As a substrate, sapphire can support the application of ε - Ga ₂ O3 in high-frequency and high-power devices.
Application scenario: Sapphire based ε - Ga ₂ O ∝ epitaxial wafers are suitable for high-frequency devices, RF power amplifiers, and UV detectors. The outer extension film not only has excellent conductivity, but also has good optical transmittance, which is very suitable for devices that need to balance conductivity and transparency.

Applications

The sapphire based ε - Ga ₂ O3 epitaxial wafer further enhances its application potential in devices, especially suitable for applications requiring polarization characteristics such as high-frequency power amplifiers and ultraviolet detection.
High frequency power devices: Thanks to their polarization characteristics and high breakdown electric field, ε - Ga ₂ O3 is highly suitable for applications such as high-frequency power amplifiers, high-voltage field-effect transistors (FETs), and has broad prospects in fields such as 5G communication, radar systems, and power electronics.
UV detection: The wide bandgap of ε - Ga ₂ O ∝ has high sensitivity to the UV band and is insensitive to visible light, making it suitable for the application of UV detectors in solar blind spots. It is widely used in fields such as fire detection, environmental monitoring, and biomedicine.

Features

Wide bandgap: The bandgap of ε - Ga ₂ O3 is approximately 4.9 eV, which is close to the 4.8 eV of β - Ga ₂ O3. However, due to the polarization effect, it exhibits advantages in high-frequency applications of certain electronic devices.
Breakdown electric field: Compared with other wide bandgap materials such as SiC and GaN, ε - Ga ₂ O3 is expected to have a high breakdown electric field, which makes it perform well in high-voltage and high-power applications.
Thermal stability: As a metastable phase, ε - Ga ₂ O3 may transform into β phase at high temperatures, so its thermal stability is not as good as β - Ga ₂ O3. This requires consideration of appropriate heat dissipation design and usage environment in practical applications

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